Dopant distribution in gate electrode of n - And p -type metal-oxide-semiconductor field effect transistor by laser-assisted atom probe

K. Inoue, F. Yano, A. Nishida, H. Takamizawa, T. Tsunomura, Y. Nagai, M. Hasegawa

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45 Citations (Scopus)

Abstract

Three dimensional dopant distributions in polycrystalline Si gate of n -type (n-) and p -type (p-) metal-oxide-semiconductor field effect transistor (MOSFET) structure were investigated by laser-assisted three dimensional atom probe. The remarkable difference in dopant distribution between n -MOSFET and p -MOSFET was clearly observed. In n -MOSFET gate, As and P atoms were segregated at grain boundaries and the interface between gate and gate oxide. No diffusion of As and P atoms into the gate oxide was observed. On the other hand, in p -MOSFET, no segregations of B atoms at grain boundaries or the interface were observed, and diffusion of B atoms into the gate oxide was directly observed.

Original languageEnglish
Article number043502
JournalApplied Physics Letters
Volume95
Issue number4
DOIs
Publication statusPublished - 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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