Dopant characterization in self-regulatory plasma doped fin field-effect transistors by atom probe tomography

H. Takamizawa, Y. Shimizu, Y. Nozawa, T. Toyama, H. Morita, Y. Yabuuchi, M. Ogura, Y. Nagai

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

Fin field-effect transistors are promising next-generation electronic devices, and the identification of dopant positions is important for their accurate characterization. We report atom probe tomography (APT) of silicon fin structures prepared by a recently developed self-regulatory plasma doping (SRPD) technique. Trenches between fin-arrays were filled using a low-energy focused ion beam to directly deposit silicon, which allowed the analysis of dopant distribution by APT near the surface of an actual fin transistor exposed to air. We directly demonstrate that SRPD can achieve a boron concentration above 1 10 20 atoms/cm 3 at the fin sidewall.

Original languageEnglish
Article number093502
JournalApplied Physics Letters
Volume100
Issue number9
DOIs
Publication statusPublished - 2012 Feb 27

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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