Dominated energy dissipation in ultrathin single crystal silicon cantilever: Surface loss

Jinling Yang, Takahito Ono, Masayoshi Esashi

Research output: Contribution to conferencePaper

9 Citations (Scopus)

Abstract

The effect of surface treatment in UHV chamber on Q factor of cantilevers with different thickness (60 nm, 170 nm and 500 nm) and different surface orientation was investigated. When length L>30 μm, Q factor is proportional to thickness, surface loss dominates. While L<30 μm, support loss surpasses the surface loss. Heating can remove SiO2 layer and absorbates, and result in an increase of Q factor. Hydrogen termination leads to a larger relative increase of Q factor in thinner structure than in thicker ones. Heating and H exposure improve Q values of Si(100) oriented cantilevers more than Si(110) oriented ones and result in the contrary resonance frequency response for these two surfaces.

Original languageEnglish
Pages235-240
Number of pages6
Publication statusPublished - 2000 Jan 1
Event13th Annual International Conference on Micro Electro Mechanical Systems (MEMS 2000) - Miyazaki, Jpn
Duration: 2000 Jan 232000 Jan 27

Other

Other13th Annual International Conference on Micro Electro Mechanical Systems (MEMS 2000)
CityMiyazaki, Jpn
Period00/1/2300/1/27

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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  • Cite this

    Yang, J., Ono, T., & Esashi, M. (2000). Dominated energy dissipation in ultrathin single crystal silicon cantilever: Surface loss. 235-240. Paper presented at 13th Annual International Conference on Micro Electro Mechanical Systems (MEMS 2000), Miyazaki, Jpn, .