Domain wall resistance in perpendicularly magnetized (Ga,Mn)As

D. Chiba, Michihiko Yamanouchi, F. Matsukura, T. Dietl, H. Ohno

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Domain wall (DW) resistance in perpendicularly magnetized (Ga,Mn)As has been investigated. The observed DW resistance is decomposed into extrinsic and intrinsic contributions. The former is explained quantitatively by the zig-zaging current due to an abrupt polarity change of the Hall electric field at DW. The latter is consistent with the disorder-induced mixing of spin channels due to small non-adiabacity of carrier spins subject to spatially varying local magnetic moment and is shown to be an order of magnitude greater than a contribution from anisotropic magnetoresistance.

Original languageEnglish
Pages (from-to)2078-2083
Number of pages6
JournalJournal of Magnetism and Magnetic Materials
Volume310
Issue number2 SUPPL. PART 3
DOIs
Publication statusPublished - 2007 Mar 1

Keywords

  • (Ga,Mn)As
  • Domain wall resistance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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