Domain-wall resistance in ferromagnetic (Ga,Mn)As

D. Chiba, M. Yamanouchi, F. Matsukura, T. Dietl, H. Ohno

Research output: Contribution to journalArticlepeer-review

64 Citations (Scopus)


A series of microstructures designed to pin domain walls (DWs) in (Ga,Mn)As with perpendicular magnetic anisotropy has been employed to determine extrinsic and intrinsic contributions to DW resistance. The former is explained quantitatively as resulting from a polarity change in the Hall electric field at DW. The latter is 1 order of magnitude greater than a term brought about by anisotropic magnetoresistance and is shown to be consistent with disorder-induced mistracking of the carrier spins subject to spatially varying magnetization.

Original languageEnglish
Article number096602
JournalPhysical review letters
Issue number9
Publication statusPublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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