Domain-wall resistance in ferromagnetic (Ga,Mn)As

D. Chiba, Michihiko Yamanouchi, F. Matsukura, T. Dietl, H. Ohno

Research output: Contribution to journalArticle

61 Citations (Scopus)

Abstract

A series of microstructures designed to pin domain walls (DWs) in (Ga,Mn)As with perpendicular magnetic anisotropy has been employed to determine extrinsic and intrinsic contributions to DW resistance. The former is explained quantitatively as resulting from a polarity change in the Hall electric field at DW. The latter is 1 order of magnitude greater than a term brought about by anisotropic magnetoresistance and is shown to be consistent with disorder-induced mistracking of the carrier spins subject to spatially varying magnetization.

Original languageEnglish
Article number096602
JournalPhysical Review Letters
Volume96
Issue number9
DOIs
Publication statusPublished - 2006 Mar 13

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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