Domain-wall resistance in CoFeB-based heterostructures with interface dzyaloshinskii–moriya interaction

Yuto Ishikuro; Masashi Kawaguchi; Yong Chang Lau; Yoshinobu Nakatani; Masamitsu Hayashi

doi:10.7567/APEX.11.073001

Domain-wall resistance in CoFeB-based heterostructures with interface dzyaloshinskii–moriya interaction

Yuto Ishikuro, Masashi Kawaguchi, Yong Chang Lau, Yoshinobu Nakatani, Masamitsu Hayashi

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We studied the domain-wall resistance in W/Ta/CoFeB/MgO heterostructures. The Ta layer thickness was varied to control the type of domain walls (DWs) via changes in the interfacial Dzyaloshinskii–Moriya interaction. The domain-wall resistance was nearly constant with changes in the Ta layer thickness. The anisotropic magnetoresistance, spin Hall magnetoresistance, and anomalous Hall effect contributed to the domain-wall resistance of the thick-Ta layer films. However a discrepancy remains for the thin-Ta layer films wherein chiral Néel-like DWs were observed. These results show the difficulty of studying the domain-wall type via resistance measurements.

Original language	English
Article number	073001
Journal	Applied Physics Express
Volume	11
Issue number	7
DOIs	https://doi.org/10.7567/APEX.11.073001
Publication status	Published - 2018 Jul
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.7567/APEX.11.073001

Cite this

@article{914229a1bfcc4de89b587e2a94563667,

title = "Domain-wall resistance in CoFeB-based heterostructures with interface dzyaloshinskii–moriya interaction",

abstract = "We studied the domain-wall resistance in W/Ta/CoFeB/MgO heterostructures. The Ta layer thickness was varied to control the type of domain walls (DWs) via changes in the interfacial Dzyaloshinskii–Moriya interaction. The domain-wall resistance was nearly constant with changes in the Ta layer thickness. The anisotropic magnetoresistance, spin Hall magnetoresistance, and anomalous Hall effect contributed to the domain-wall resistance of the thick-Ta layer films. However a discrepancy remains for the thin-Ta layer films wherein chiral N{\'e}el-like DWs were observed. These results show the difficulty of studying the domain-wall type via resistance measurements.",

author = "Yuto Ishikuro and Masashi Kawaguchi and Lau, {Yong Chang} and Yoshinobu Nakatani and Masamitsu Hayashi",

note = "Funding Information: Acknowledgments The authors thank Daichi Chiba and Kyung-Jin Lee for the discussion on DW magnetoresistance. This work was partly supported by JSPS Grant-in-Aids (15H05702, 16H03853), Casio Foundation, and the Center of the Spintronics Research Network of Japan. Y.-C.L. is a JSPS International Research Fellow. Publisher Copyright: {\textcopyright} 2018 The Japan Society of Applied Physics.",

year = "2018",

month = jul,

doi = "10.7567/APEX.11.073001",

language = "English",

volume = "11",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "7",

}

TY - JOUR

T1 - Domain-wall resistance in CoFeB-based heterostructures with interface dzyaloshinskii–moriya interaction

AU - Ishikuro, Yuto

AU - Kawaguchi, Masashi

AU - Lau, Yong Chang

AU - Nakatani, Yoshinobu

AU - Hayashi, Masamitsu

N1 - Funding Information: Acknowledgments The authors thank Daichi Chiba and Kyung-Jin Lee for the discussion on DW magnetoresistance. This work was partly supported by JSPS Grant-in-Aids (15H05702, 16H03853), Casio Foundation, and the Center of the Spintronics Research Network of Japan. Y.-C.L. is a JSPS International Research Fellow. Publisher Copyright: © 2018 The Japan Society of Applied Physics.

PY - 2018/7

Y1 - 2018/7

N2 - We studied the domain-wall resistance in W/Ta/CoFeB/MgO heterostructures. The Ta layer thickness was varied to control the type of domain walls (DWs) via changes in the interfacial Dzyaloshinskii–Moriya interaction. The domain-wall resistance was nearly constant with changes in the Ta layer thickness. The anisotropic magnetoresistance, spin Hall magnetoresistance, and anomalous Hall effect contributed to the domain-wall resistance of the thick-Ta layer films. However a discrepancy remains for the thin-Ta layer films wherein chiral Néel-like DWs were observed. These results show the difficulty of studying the domain-wall type via resistance measurements.

AB - We studied the domain-wall resistance in W/Ta/CoFeB/MgO heterostructures. The Ta layer thickness was varied to control the type of domain walls (DWs) via changes in the interfacial Dzyaloshinskii–Moriya interaction. The domain-wall resistance was nearly constant with changes in the Ta layer thickness. The anisotropic magnetoresistance, spin Hall magnetoresistance, and anomalous Hall effect contributed to the domain-wall resistance of the thick-Ta layer films. However a discrepancy remains for the thin-Ta layer films wherein chiral Néel-like DWs were observed. These results show the difficulty of studying the domain-wall type via resistance measurements.

UR - http://www.scopus.com/inward/record.url?scp=85049063442&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85049063442&partnerID=8YFLogxK

U2 - 10.7567/APEX.11.073001

DO - 10.7567/APEX.11.073001

M3 - Article

AN - SCOPUS:85049063442

SN - 1882-0778

VL - 11

JO - Applied Physics Express

JF - Applied Physics Express

IS - 7

M1 - 073001

ER -

Domain-wall resistance in CoFeB-based heterostructures with interface dzyaloshinskii–moriya interaction

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this