Domain-wall resistance in CoFeB-based heterostructures with interface dzyaloshinskii–moriya interaction

Yuto Ishikuro, Masashi Kawaguchi, Yong Chang Lau, Yoshinobu Nakatani, Masamitsu Hayashi

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


We studied the domain-wall resistance in W/Ta/CoFeB/MgO heterostructures. The Ta layer thickness was varied to control the type of domain walls (DWs) via changes in the interfacial Dzyaloshinskii–Moriya interaction. The domain-wall resistance was nearly constant with changes in the Ta layer thickness. The anisotropic magnetoresistance, spin Hall magnetoresistance, and anomalous Hall effect contributed to the domain-wall resistance of the thick-Ta layer films. However a discrepancy remains for the thin-Ta layer films wherein chiral Néel-like DWs were observed. These results show the difficulty of studying the domain-wall type via resistance measurements.

Original languageEnglish
Article number073001
JournalApplied Physics Express
Issue number7
Publication statusPublished - 2018 Jul
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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