We studied the domain-wall resistance in W/Ta/CoFeB/MgO heterostructures. The Ta layer thickness was varied to control the type of domain walls (DWs) via changes in the interfacial Dzyaloshinskii–Moriya interaction. The domain-wall resistance was nearly constant with changes in the Ta layer thickness. The anisotropic magnetoresistance, spin Hall magnetoresistance, and anomalous Hall effect contributed to the domain-wall resistance of the thick-Ta layer films. However a discrepancy remains for the thin-Ta layer films wherein chiral Néel-like DWs were observed. These results show the difficulty of studying the domain-wall type via resistance measurements.
ASJC Scopus subject areas
- Physics and Astronomy(all)