Disturbless flash memory due to high boost efficiency on BiCS structure and optimal memory film stack for ultra high density storage device

Yosuke Komori, Masaru Kido, Masaru Kito, Ryota Katsumata, Yoshiaki Fukuzumi, Hiroyasu Tanaka, Yuzo Nagata, Megumi Ishiduki, Hideaki Aochi, Akihiro Nitayama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

34 Citations (Scopus)

Abstract

Program and erase operation on NAND-string of Bit-Cost Scalable (BiCS) flash memory has been successfully achieved. High boost efficiency of floating pillars and ONON (block oxide/charge SiN/tunnel oxide/tunnel SiN) structure as a memory film stack improve disturbance characteristics enough to realize tera-bit density of three dimensional flash memory. BiCS flash memory has become a more promising candidate for ultra high density memory.

Original languageEnglish
Title of host publication2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs
Publication statusPublished - 2008 Dec 1
Event2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States
Duration: 2008 Dec 152008 Dec 17

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2008 IEEE International Electron Devices Meeting, IEDM 2008
CountryUnited States
CitySan Francisco, CA
Period08/12/1508/12/17

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Disturbless flash memory due to high boost efficiency on BiCS structure and optimal memory film stack for ultra high density storage device'. Together they form a unique fingerprint.

  • Cite this

    Komori, Y., Kido, M., Kito, M., Katsumata, R., Fukuzumi, Y., Tanaka, H., Nagata, Y., Ishiduki, M., Aochi, H., & Nitayama, A. (2008). Disturbless flash memory due to high boost efficiency on BiCS structure and optimal memory film stack for ultra high density storage device. In 2008 IEEE International Electron Devices Meeting, IEDM 2008 [4796831] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2008.4796831