Distinctive current-induced magnetization switching in a current-perpendicular-to-plane giant-magnetoresistance nanopillar with a synthetic antiferromagnet free layer

T. Ochiai, Y. Jiang, A. Hirohata, N. Tezuka, S. Sugimoto, K. Inomata

Research output: Contribution to journalArticlepeer-review

36 Citations (Scopus)

Abstract

We investigated current-induced magnetization switching (CIMS) in two types of pseudo-spin-valve nanopillars with current-perpendicular-to-plane giant magnetoresistance (CPP-GMR); Co90 Fe10 (10 nm) Cu (10 nm) Co90 Fe10 (2.5 nm) (conventional type) and Co90 Fe10 (10 nm) Cu (10 nm) Co90 Fe10 (1.5 nm) Ru (0.45 nm) Co90 Fe10 (2.5 nm) (synthetic antiferromagnet; SyAF type). We observed the CIMS in the both CPP-GMR structures at room temperature. In particular for the SyAF type nanopillars, the CIMS was observed only in a negative current regime. We also discovered that the applied magnetic field dependence of the CIMS shows absolutely different behavior from that of the conventional type. These peculiar CIMS behaviors with the SyAF free layer are attributed to majority electron spin transfer torque from the thick to the thin Co90 Fe10 layers, enhanced by the presence of a Ru layer.

Original languageEnglish
Article number242506
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number24
DOIs
Publication statusPublished - 2005 Jun 13

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Distinctive current-induced magnetization switching in a current-perpendicular-to-plane giant-magnetoresistance nanopillar with a synthetic antiferromagnet free layer'. Together they form a unique fingerprint.

Cite this