Dissolution and Recrystallization of GaN in Molten Na

Masato Aoki; Hisanori Yamane; Masahiko Shimada; Seiji Sarayama; Hirokazu Iwata; Francis J. Disalvo

doi:10.1143/jjap.42.7272

Dissolution and Recrystallization of GaN in Molten Na

Masato Aoki, Hisanori Yamane, Masahiko Shimada, Seiji Sarayama, Hirokazu Iwata, Francis J. Disalvo

Center for Exploration of New Inorganic Materials

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The dissolution mass of GaN in molten Na at 650-800°C and 3-5 MPa of N₂ was determined by weight loss of polycrystalline GaN fragments immersed in Na and by chemical analysis of the amount of Ga dissolved in Na. The dissolution of GaN in Na was equilibrated within 100 h and the dissolution mass increased with increasing temperature but decreased with increasing N ₂ pressure. It was found that the addition of a small amount of Li₃N into the Na melt increased the dissolution mass of GaN. Transparent platelet single crystals of GaN with sizes over 300 μm were grown from nutrient GaN powder by cooling a Na solution with a Li₃N additives from 800°C to 700°C at 1°C/h.

Original language	English
Pages (from-to)	7272-7275
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	42
Issue number	12
DOIs	https://doi.org/10.1143/jjap.42.7272
Publication status	Published - 2003 Dec

Keywords

Dissolution
Flux growth
GaN
LiN additives
Single crystal

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Dissolution and Recrystallization of GaN in Molten Na",

abstract = "The dissolution mass of GaN in molten Na at 650-800°C and 3-5 MPa of N2 was determined by weight loss of polycrystalline GaN fragments immersed in Na and by chemical analysis of the amount of Ga dissolved in Na. The dissolution of GaN in Na was equilibrated within 100 h and the dissolution mass increased with increasing temperature but decreased with increasing N 2 pressure. It was found that the addition of a small amount of Li3N into the Na melt increased the dissolution mass of GaN. Transparent platelet single crystals of GaN with sizes over 300 μm were grown from nutrient GaN powder by cooling a Na solution with a Li3N additives from 800°C to 700°C at 1°C/h.",

keywords = "Dissolution, Flux growth, GaN, LiN additives, Single crystal",

author = "Masato Aoki and Hisanori Yamane and Masahiko Shimada and Seiji Sarayama and Hirokazu Iwata and Disalvo, {Francis J.}",

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AU - Aoki, Masato

AU - Yamane, Hisanori

AU - Shimada, Masahiko

AU - Sarayama, Seiji

AU - Iwata, Hirokazu

AU - Disalvo, Francis J.

PY - 2003/12

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N2 - The dissolution mass of GaN in molten Na at 650-800°C and 3-5 MPa of N2 was determined by weight loss of polycrystalline GaN fragments immersed in Na and by chemical analysis of the amount of Ga dissolved in Na. The dissolution of GaN in Na was equilibrated within 100 h and the dissolution mass increased with increasing temperature but decreased with increasing N 2 pressure. It was found that the addition of a small amount of Li3N into the Na melt increased the dissolution mass of GaN. Transparent platelet single crystals of GaN with sizes over 300 μm were grown from nutrient GaN powder by cooling a Na solution with a Li3N additives from 800°C to 700°C at 1°C/h.

AB - The dissolution mass of GaN in molten Na at 650-800°C and 3-5 MPa of N2 was determined by weight loss of polycrystalline GaN fragments immersed in Na and by chemical analysis of the amount of Ga dissolved in Na. The dissolution of GaN in Na was equilibrated within 100 h and the dissolution mass increased with increasing temperature but decreased with increasing N 2 pressure. It was found that the addition of a small amount of Li3N into the Na melt increased the dissolution mass of GaN. Transparent platelet single crystals of GaN with sizes over 300 μm were grown from nutrient GaN powder by cooling a Na solution with a Li3N additives from 800°C to 700°C at 1°C/h.

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KW - Flux growth

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KW - LiN additives

KW - Single crystal

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