Dissolution and Recrystallization of GaN in Molten Na

Masato Aoki, Hisanori Yamane, Masahiko Shimada, Seiji Sarayama, Hirokazu Iwata, Francis J. Disalvo

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

The dissolution mass of GaN in molten Na at 650-800°C and 3-5 MPa of N2 was determined by weight loss of polycrystalline GaN fragments immersed in Na and by chemical analysis of the amount of Ga dissolved in Na. The dissolution of GaN in Na was equilibrated within 100 h and the dissolution mass increased with increasing temperature but decreased with increasing N 2 pressure. It was found that the addition of a small amount of Li3N into the Na melt increased the dissolution mass of GaN. Transparent platelet single crystals of GaN with sizes over 300 μm were grown from nutrient GaN powder by cooling a Na solution with a Li3N additives from 800°C to 700°C at 1°C/h.

Original languageEnglish
Pages (from-to)7272-7275
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number12
DOIs
Publication statusPublished - 2003 Dec

Keywords

  • Dissolution
  • Flux growth
  • GaN
  • LiN additives
  • Single crystal

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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