Dissociative adsorption of monomethylsilane on Si(100) as revealed by comparative temperature-programmed desorption studies on H/, C2H2/, and MMS/Si(100)

Hideki Nakazawa, Maki Suemitsu

Research output: Contribution to journalConference articlepeer-review

31 Citations (Scopus)

Abstract

Dissociative adsorption of monomethylsilane (MMS), a promising precursor gas for low-temperature SiC, has been investigated on Si(100) by using temperature-programmed desorption (TPD) method after its comparison with H/ and C2H2/Si(100) surfaces. For both MMS/ and C2H2/Si(100), the β1 peak from SiH species showed a shift to higher temperatures in the presence of surface C atoms, while two new peaks appeared separately for the two gases: γ peak (approximately 640 °C) for the C2H2/ and δ peak (approximately 870 °C) for the MMS/Si(100). The γ peak is suggested to be from hydrogen desorption from SiH species at which a C atom is inserted to its backbond. The δ peak is related to desorption from surface CHx species. The absence of the γ peak on MMS/Si(100) suggests absence of atomic exchange between surface C and substrate Si atoms on its adsorption.

Original languageEnglish
Pages (from-to)139-145
Number of pages7
JournalApplied Surface Science
Volume162
DOIs
Publication statusPublished - 2000 Aug 1
Event5th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5) - Provence, France
Duration: 1999 Jul 61999 Jul 9

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'Dissociative adsorption of monomethylsilane on Si(100) as revealed by comparative temperature-programmed desorption studies on H/, C<sub>2</sub>H<sub>2</sub>/, and MMS/Si(100)'. Together they form a unique fingerprint.

Cite this