Dispersion-type Hall resistance in InSb Pt hybrid systems

Y. Shiomi, E. Saitoh

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

In nonmagnetic semiconductors and metals, most of Hall resistance exhibits a linear dependence with applied magnetic fields. In this work, by combining conduction in a metal and a semiconductor under external magnetic fields, we realize a dispersion-type magnetic-field dependence of Hall resistance. The dispersion-type Hall resistance appears in a broad temperature range below 150 K, where quantum linear magnetoresistance is noticeable in the semiconductor substrate. This unconventional Hall response in metal|semiconductor hybrid systems is explained by a change in dominant conduction from the semiconductor to the metal with increasing magnetic field strength.

Original languageEnglish
Article number22085
JournalScientific reports
Volume6
DOIs
Publication statusPublished - 2016 Feb 24

ASJC Scopus subject areas

  • General

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