Anomalous depletion/accumulation (D/A) carrier concentration profiles were observed at GaAs/GaAs and InGaAs/GaAs MOVPE regrown interfaces prepared under various growth and processing conditions. Based on a C-V and DLTS study, a disorder induced gap state (DIGS) continuum due to interface crystalline disorder rather than specific discrete deep levels is proposed to be responsible for the anomalous D/A profile and Fermi level pinning.
|Title of host publication||Conference on Solid State Devices and Materials|
|Publisher||Business Cent for Academic Soc Japan|
|Number of pages||4|
|ISBN (Print)||493081314X, 9784930813145|
|Publication status||Published - 1986|
|Name||Conference on Solid State Devices and Materials|
ASJC Scopus subject areas