DISORDER INDUCED GAP STATE MODEL FOR ANOMALOUS C-V CARRIER CONCENTRATION PROFILES AT EPITAXIALLY GROWN INTERFACES.

Hideki Hasegawa, Eiji Ikeda, Hideo Ohno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Anomalous depletion/accumulation (D/A) carrier concentration profiles were observed at GaAs/GaAs and InGaAs/GaAs MOVPE regrown interfaces prepared under various growth and processing conditions. Based on a C-V and DLTS study, a disorder induced gap state (DIGS) continuum due to interface crystalline disorder rather than specific discrete deep levels is proposed to be responsible for the anomalous D/A profile and Fermi level pinning.

Original languageEnglish
Title of host publicationConference on Solid State Devices and Materials
PublisherBusiness Cent for Academic Soc Japan
Pages145-148
Number of pages4
ISBN (Print)493081314X, 9784930813145
DOIs
Publication statusPublished - 1986
Externally publishedYes

Publication series

NameConference on Solid State Devices and Materials

ASJC Scopus subject areas

  • Engineering(all)

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