Dislocation velocity in indium phosphide

Ichiro Yonenaga; Koji Sumino

doi:10.1063/1.104439

Dislocation velocity in indium phosphide

Ichiro Yonenaga, Koji Sumino

Materials Design Division

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

Velocities of α, β, and screw dislocations in InP crystals generated from surface scratches were measured as a function of stress and temperature by means of the etch pit technique. Effects of Zn and S impurities, acting as acceptor and donor, respectively, on the dislocation velocity were also investigated. lt was found that Zn impurity strongly retards the motion of all types of dislocations. On the other hand, S impurity is found to reduce the mobilities of β and screw dislocations while it enhances the mobility of α dislocations.

Original language	English
Pages (from-to)	48-50
Number of pages	3
Journal	Applied Physics Letters
Volume	58
Issue number	1
DOIs	https://doi.org/10.1063/1.104439
Publication status	Published - 1991

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.104439

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abstract = "Velocities of α, β, and screw dislocations in InP crystals generated from surface scratches were measured as a function of stress and temperature by means of the etch pit technique. Effects of Zn and S impurities, acting as acceptor and donor, respectively, on the dislocation velocity were also investigated. lt was found that Zn impurity strongly retards the motion of all types of dislocations. On the other hand, S impurity is found to reduce the mobilities of β and screw dislocations while it enhances the mobility of α dislocations.",

author = "Ichiro Yonenaga and Koji Sumino",

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AU - Yonenaga, Ichiro

AU - Sumino, Koji

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AB - Velocities of α, β, and screw dislocations in InP crystals generated from surface scratches were measured as a function of stress and temperature by means of the etch pit technique. Effects of Zn and S impurities, acting as acceptor and donor, respectively, on the dislocation velocity were also investigated. lt was found that Zn impurity strongly retards the motion of all types of dislocations. On the other hand, S impurity is found to reduce the mobilities of β and screw dislocations while it enhances the mobility of α dislocations.

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Dislocation velocity in indium phosphide

Abstract

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