Velocities of dislocations in single crystal Ge1-xSix alloy semiconductors with x=0.004-0.022 grown by the Czochralski method were investigated by means of etch pit technique in the temperature range 450-700°C and the stress range 3-20 MPa. The dislocation velocity in the GeSi decreases monotonically with an increase in the Si content, reaching about a half of that in Ge at x=0.022. The dependencies of the dislocation velocity on stress and temperature in the alloys are expressed by the same type of empirical equation as those in other elemental and compound semiconductors.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)