Abstract
The mechanical strength and dislocation velocities in single crystal Ge1-xSix alloys grown by the Czochralski method were investigated by compressive deformation and by the etch pit technique, respectively. In the temperature range 450 - 700°C and the stress range 3 - 20 MPa, the dislocation velocity in the GeSi alloys with x = 0.004 - 0.053 decreases monotonously with an increase in the Si content, reaching about a quarter of that in Ge at x = 0.053, and can be expressed as a function of the stress and the temperature. The yield stress of the GeSi alloy increases with increasing Si content from x = 0 to 0.4 and is temperature-insensitive at high temperatures, showing that the flow stress of alloy has an athermal component which is absent in elemental or compound semiconductors.
Original language | English |
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Pages (from-to) | 337-342 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 442 |
Publication status | Published - 1997 Jan 1 |
Event | Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: 1996 Dec 2 → 1996 Dec 6 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering