Dislocation velocities in GeSi bulk alloys

Ichiro Yonenaga

Research output: Contribution to journalConference articlepeer-review

Abstract

The mechanical strength and dislocation velocities in single crystal Ge1-xSix alloys grown by the Czochralski method were investigated by compressive deformation and by the etch pit technique, respectively. In the temperature range 450 - 700°C and the stress range 3 - 20 MPa, the dislocation velocity in the GeSi alloys with x = 0.004 - 0.053 decreases monotonously with an increase in the Si content, reaching about a quarter of that in Ge at x = 0.053, and can be expressed as a function of the stress and the temperature. The yield stress of the GeSi alloy increases with increasing Si content from x = 0 to 0.4 and is temperature-insensitive at high temperatures, showing that the flow stress of alloy has an athermal component which is absent in elemental or compound semiconductors.

Original languageEnglish
Pages (from-to)337-342
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume442
Publication statusPublished - 1997 Jan 1
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: 1996 Dec 21996 Dec 6

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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