Dislocation velocities and mechanical strength of bulk gesi crystals

I. Yonenaga

doi:10.1002/(SICI)1521-396X(199901)171:1<41::AID-PSSA41>3.0.CO;2-W

Dislocation velocities and mechanical strength of bulk gesi crystals

I. Yonenaga

Materials Design Division

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The dislocation velocities and mechanical strength of bulk crystals of Ge_1-xSi_x alloys have been investigated by the etch pit technique and compressive deformation tests, respectively. The velocity of dislocations has been determined as a function of stress and temperature in the composition ranges 0 < x < 0.08 and 0.94 < x < 1. In the composition range 0 < x < 1 the yield stress showed a maximum around x = 0.5 and was dependent on the composition as being proportional to x(1 - x). Built-in long-range internal stress fields in GeSi alloy caused by local fluctuations of the alloy composition together with dynamic development of the solute atmosphere around dislocations were thought to result in the strengthening of GeSi as a unique alloying effect.

Original language	English
Pages (from-to)	41-46
Number of pages	6
Journal	Physica Status Solidi (A) Applied Research
Volume	171
Issue number	1
DOIs	https://doi.org/10.1002/(SICI)1521-396X(199901)171:1<41::AID-PSSA41>3.0.CO;2-W
Publication status	Published - 1999 Jan 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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