Dislocation of high quality P-doped ZnTe substrate examined by X-ray topography

K. Yoshino, T. Kakeno, M. Yoneta, Ichiro Yonenaga

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Transmission X-ray topograph was successfully observed in a high quality P-doped ZnTe substrate (100). The dislocation density was estimated to be approximately 7000 cm-2. This value was smallest in the ZnTe substrate. Both peak energies in the photoluminescence spectra were the same in the dislocation and no-dislocation areas. However, the intensity of the free-to-acceptor emission in the dislocation area was larger than that in the no-dislocation area. It was found that the majority of the phosphor impurities existed in the dislocation areas.

Original languageEnglish
Pages (from-to)445-448
Number of pages4
JournalJournal of Materials Science: Materials in Electronics
Volume16
Issue number7
DOIs
Publication statusPublished - 2005 Jul 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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