Dislocation of high-quality large DCP-ZnTe substrate examined by photoluminescence and X-ray topography

K. Yoshino; T. Kakeno; M. Yoneta; I. Yonenaga

doi:10.1016/j.mssp.2006.01.005

Dislocation of high-quality large DCP-ZnTe substrate examined by photoluminescence and X-ray topography

K. Yoshino, T. Kakeno, M. Yoneta, I. Yonenaga

Materials Design Division

Research output: Contribution to journal › Article › peer-review

Abstract

Transmission X-ray topography of the Ga-doped ZnTe crystals grown by the double crucible liquid encapsulated pulling (DCP) method is presented. The results show that dislocation density increases with growth direction from top to bottom. Photoluminescence (PL) intensity of the (A₀, X) emission clearly decreases with the growth direction from top to bottom. Therefore, it is concluded that the PL intensity of the (A₀, X) peak decreases with increasing dislocation density.

Original language	English
Pages (from-to)	45-48
Number of pages	4
Journal	Materials Science in Semiconductor Processing
Volume	9
Issue number	1-3
DOIs	https://doi.org/10.1016/j.mssp.2006.01.005
Publication status	Published - 2006 Feb

Keywords

Dislocation
Photoluminescence
Transmission X-ray topography
ZnTe

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mssp.2006.01.005

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title = "Dislocation of high-quality large DCP-ZnTe substrate examined by photoluminescence and X-ray topography",

abstract = "Transmission X-ray topography of the Ga-doped ZnTe crystals grown by the double crucible liquid encapsulated pulling (DCP) method is presented. The results show that dislocation density increases with growth direction from top to bottom. Photoluminescence (PL) intensity of the (A0, X) emission clearly decreases with the growth direction from top to bottom. Therefore, it is concluded that the PL intensity of the (A0, X) peak decreases with increasing dislocation density.",

keywords = "Dislocation, Photoluminescence, Transmission X-ray topography, ZnTe",

author = "K. Yoshino and T. Kakeno and M. Yoneta and I. Yonenaga",

year = "2006",

month = feb,

doi = "10.1016/j.mssp.2006.01.005",

language = "English",

volume = "9",

pages = "45--48",

journal = "Materials Science in Semiconductor Processing",

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TY - JOUR

T1 - Dislocation of high-quality large DCP-ZnTe substrate examined by photoluminescence and X-ray topography

AU - Yoshino, K.

AU - Kakeno, T.

AU - Yoneta, M.

AU - Yonenaga, I.

PY - 2006/2

Y1 - 2006/2

N2 - Transmission X-ray topography of the Ga-doped ZnTe crystals grown by the double crucible liquid encapsulated pulling (DCP) method is presented. The results show that dislocation density increases with growth direction from top to bottom. Photoluminescence (PL) intensity of the (A0, X) emission clearly decreases with the growth direction from top to bottom. Therefore, it is concluded that the PL intensity of the (A0, X) peak decreases with increasing dislocation density.

AB - Transmission X-ray topography of the Ga-doped ZnTe crystals grown by the double crucible liquid encapsulated pulling (DCP) method is presented. The results show that dislocation density increases with growth direction from top to bottom. Photoluminescence (PL) intensity of the (A0, X) emission clearly decreases with the growth direction from top to bottom. Therefore, it is concluded that the PL intensity of the (A0, X) peak decreases with increasing dislocation density.

KW - Dislocation

KW - Photoluminescence

KW - Transmission X-ray topography

KW - ZnTe

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U2 - 10.1016/j.mssp.2006.01.005

DO - 10.1016/j.mssp.2006.01.005

M3 - Article

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SN - 1369-8001

VL - 9

SP - 45

EP - 48

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 1-3

ER -

Dislocation of high-quality large DCP-ZnTe substrate examined by photoluminescence and X-ray topography

Abstract

Keywords

ASJC Scopus subject areas

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