Dislocation mobility and photoluminescence of plastically deformed GaN

I. Yonenaga, S. Itoh, T. Goto

Research output: Contribution to journalConference articlepeer-review

13 Citations (Scopus)


The yield strength of GaN bulk crystals determined directly by means of compressive deformation is around 100-200 MPa in the temperature range 900-1000°C. On the basis of the observed temperature and strain rate dependencies of yield stress, the dislocation mobility at elevated temperatures is evaluated. Deformed GaN shows a drastic reduction of PL intensity, suggesting that newly formed dislocations give rise to non-radiative recombination centers.

Original languageEnglish
Pages (from-to)484-487
Number of pages4
JournalPhysica B: Condensed Matter
Publication statusPublished - 2003 Dec 31
EventProceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark
Duration: 2003 Jul 282003 Aug 1


  • Dislocations
  • Nitrides
  • Photoluminescence
  • Structure

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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