Abstract
The yield strength of GaN bulk crystals determined directly by means of compressive deformation is around 100-200 MPa in the temperature range 900-1000°C. On the basis of the observed temperature and strain rate dependencies of yield stress, the dislocation mobility at elevated temperatures is evaluated. Deformed GaN shows a drastic reduction of PL intensity, suggesting that newly formed dislocations give rise to non-radiative recombination centers.
Original language | English |
---|---|
Pages (from-to) | 484-487 |
Number of pages | 4 |
Journal | Physica B: Condensed Matter |
Volume | 340-342 |
DOIs | |
Publication status | Published - 2003 Dec 31 |
Event | Proceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark Duration: 2003 Jul 28 → 2003 Aug 1 |
Keywords
- Dislocations
- Nitrides
- Photoluminescence
- Structure
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering