Dislocation mobility and photoluminescence of plastically deformed GaN

I. Yonenaga; S. Itoh; T. Goto

doi:10.1016/j.physb.2003.09.040

Dislocation mobility and photoluminescence of plastically deformed GaN

I. Yonenaga, S. Itoh, T. Goto

Materials Design Division

Research output: Contribution to journal › Conference article › peer-review

13 Citations (Scopus)

Abstract

The yield strength of GaN bulk crystals determined directly by means of compressive deformation is around 100-200 MPa in the temperature range 900-1000°C. On the basis of the observed temperature and strain rate dependencies of yield stress, the dislocation mobility at elevated temperatures is evaluated. Deformed GaN shows a drastic reduction of PL intensity, suggesting that newly formed dislocations give rise to non-radiative recombination centers.

Original language	English
Pages (from-to)	484-487
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	340-342
DOIs	https://doi.org/10.1016/j.physb.2003.09.040
Publication status	Published - 2003 Dec 31
Event	Proceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark Duration: 2003 Jul 28 → 2003 Aug 1

Keywords

Dislocations
Nitrides
Photoluminescence
Structure

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Dislocation mobility and photoluminescence of plastically deformed GaN",

abstract = "The yield strength of GaN bulk crystals determined directly by means of compressive deformation is around 100-200 MPa in the temperature range 900-1000°C. On the basis of the observed temperature and strain rate dependencies of yield stress, the dislocation mobility at elevated temperatures is evaluated. Deformed GaN shows a drastic reduction of PL intensity, suggesting that newly formed dislocations give rise to non-radiative recombination centers.",

keywords = "Dislocations, Nitrides, Photoluminescence, Structure",

author = "I. Yonenaga and S. Itoh and T. Goto",

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T1 - Dislocation mobility and photoluminescence of plastically deformed GaN

AU - Yonenaga, I.

AU - Itoh, S.

AU - Goto, T.

PY - 2003/12/31

Y1 - 2003/12/31

N2 - The yield strength of GaN bulk crystals determined directly by means of compressive deformation is around 100-200 MPa in the temperature range 900-1000°C. On the basis of the observed temperature and strain rate dependencies of yield stress, the dislocation mobility at elevated temperatures is evaluated. Deformed GaN shows a drastic reduction of PL intensity, suggesting that newly formed dislocations give rise to non-radiative recombination centers.

AB - The yield strength of GaN bulk crystals determined directly by means of compressive deformation is around 100-200 MPa in the temperature range 900-1000°C. On the basis of the observed temperature and strain rate dependencies of yield stress, the dislocation mobility at elevated temperatures is evaluated. Deformed GaN shows a drastic reduction of PL intensity, suggesting that newly formed dislocations give rise to non-radiative recombination centers.

KW - Dislocations

KW - Nitrides

KW - Photoluminescence

KW - Structure

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U2 - 10.1016/j.physb.2003.09.040

DO - 10.1016/j.physb.2003.09.040

M3 - Conference article

AN - SCOPUS:0346686011

VL - 340-342

SP - 484

EP - 487

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

T2 - Proceedings of the 22nd International Conference on Defects in (ICDS-22)

Y2 - 28 July 2003 through 1 August 2003

ER -

Dislocation mobility and photoluminescence of plastically deformed GaN

Abstract

Keywords

ASJC Scopus subject areas

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