Abstract
30K-photocapacitance and excitation photocapacitance methods were applied to reveal the dislocation-induced deep levels in coalescent epitaxial lateral overgrowth layers of InP. Point-contact Schottky barrier junctions with small junction areas were formed on dislocated and dislocation-free regions. In the dislocation-free layers, the dominant deep level was located at E c-1.30 eV, whereas in the dislocated area, dominant deep levels were detected at Ec-0.86 eV and 1.05 eV. A neutralized state was also detected at 0.66 eV+Ev. Excitation photocapacitance results have shown that the defect configuration coordinate diagram of the dislocation-induced deep levels was considered with large Frank-Condon shifts of 0.28 eV.
Original language | English |
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Pages (from-to) | 1735-1738 |
Number of pages | 4 |
Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
Volume | 4 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2007 Dec 1 |
Event | 33rd International Symposium on Compound Semiconductors, ISCS-2006 - Vancouver, BC, Canada Duration: 2006 Aug 13 → 2006 Aug 17 |
ASJC Scopus subject areas
- Condensed Matter Physics