Dislocation-induced deep levels in ELO InP revealed by point contact photocapacitance measurements

Yutaka Oyama, Toshihiro Kimura, Jun Ichi Nishizawa

Research output: Contribution to journalConference article

Abstract

30K-photocapacitance and excitation photocapacitance methods were applied to reveal the dislocation-induced deep levels in coalescent epitaxial lateral overgrowth layers of InP. Point-contact Schottky barrier junctions with small junction areas were formed on dislocated and dislocation-free regions. In the dislocation-free layers, the dominant deep level was located at E c-1.30 eV, whereas in the dislocated area, dominant deep levels were detected at Ec-0.86 eV and 1.05 eV. A neutralized state was also detected at 0.66 eV+Ev. Excitation photocapacitance results have shown that the defect configuration coordinate diagram of the dislocation-induced deep levels was considered with large Frank-Condon shifts of 0.28 eV.

Original languageEnglish
Pages (from-to)1735-1738
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume4
Issue number5
DOIs
Publication statusPublished - 2007 Dec 1
Event33rd International Symposium on Compound Semiconductors, ISCS-2006 - Vancouver, BC, Canada
Duration: 2006 Aug 132006 Aug 17

ASJC Scopus subject areas

  • Condensed Matter Physics

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