Dislocation-induced deep electronic states in InP: Photocapacitance measurements

Yutaka Oyama, Jun Ichi Nishizawa, Toshihiro Kimura, Takenori Tanno

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3 Citations (Scopus)


Photocapacitance and excitation photocapacitance methods were applied to reveal the dislocation-induced deep levels in coalescent epitaxial lateral overgrowth layers of InP. Point-contact Schottky barrier junctions with small junction areas were formed on dislocated and dislocation-free regions by using wedge wire-bonding of Au, and photocapacitance measurements were then carried out at 30 K. In the dislocation-free layers, the dominant deep level was located at 1.30 eV below the conduction band, whereas in the dislocated area, dominant deep levels were detected at 0.86 eV (λ=1.44 μm) and 1.05 eV (λ=1.18 μm) below the conduction band. A neutralized state was also detected at 0.66 eV above the valence band. From the detailed excitation photocapacitance results, it is shown that the defect configuration coordinate diagram of the dislocation-induced deep levels was considered with large Frank-Condon shifts (dFC) of 0.28 eV. This means that the atomic configurations around the deep levels are highly relaxed, as expected from the structures of the dislocation cores.

Original languageEnglish
Article number235210
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number23
Publication statusPublished - 2006 Dec 18

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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