Dislocation-Impurity Interaction in Silicon

Ichiro Yonenaga

Research output: Contribution to journalConference article

11 Citations (Scopus)

Abstract

The dynamic interaction between dislocations and impurities B, P and Ge in Si with concentrations up to 2.5 × 1020 cm-3 is investigated by the etch-pit technique, in comparison with that O impurity. Dislocation generation from a surface scratch is strongly suppressed when the concentration of B and P impurities exceeds 1 × 1019 cm -3, originating from the immobilization by preferential impurity segregation. Dislocation velocity in motion enhances on increasing the concentration in B and P impurities. Neutral impurity Ge has weak effect on dislocation generation and velocity enhancement. Co-doping of Ge and B impurities is effective at immobilizing and retarding the velocity of dislocations in Si.

Original languageEnglish
Pages (from-to)423-432
Number of pages10
JournalSolid State Phenomena
Volume95-96
Publication statusPublished - 2004 Jan 1
EventGettering and Defect Engineering in Semiconductor Technology GADEST 2003: Proceedings of the 10th International Autumn Meeting - Brandenburg, Germany
Duration: 2003 Sep 212003 Sep 26

Keywords

  • Dislocation-Impurity Interaction
  • Generation
  • Immobilization
  • Mobility
  • Si

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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