Dislocation-impurity interaction in Si

Ichiro Yonenaga

doi:10.1016/j.mssp.2003.07.021

Dislocation-impurity interaction in Si

Ichiro Yonenaga

Materials Design Division

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The dynamic interaction between dislocations and impurities B, P and Ge in Si with concentrations up to 2.5×10²⁰cm^-3 is investigated by the etch-pit technique, in comparison with that of O impurity in Si. Dislocation generation from a surface scratch is strongly suppressed when the concentration of B and P impurities exceeds 1×10 ¹⁹cm^-3, originating from the immobilization by preferential impurity segregation. Dislocation velocity in motion enhances on increasing the concentration in B and P impurities. Neutral impurity Ge has weak effect on dislocation generation and velocity enhancement.

Original language	English
Pages (from-to)	355-358
Number of pages	4
Journal	Materials Science in Semiconductor Processing
Volume	6
Issue number	5-6
DOIs	https://doi.org/10.1016/j.mssp.2003.07.021
Publication status	Published - 2003 Oct 1

Keywords

Dislocation-impurity interaction
Immobilization
Mobility
Si

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Dislocation-impurity interaction in Si",

abstract = "The dynamic interaction between dislocations and impurities B, P and Ge in Si with concentrations up to 2.5×1020cm-3 is investigated by the etch-pit technique, in comparison with that of O impurity in Si. Dislocation generation from a surface scratch is strongly suppressed when the concentration of B and P impurities exceeds 1×10 19cm-3, originating from the immobilization by preferential impurity segregation. Dislocation velocity in motion enhances on increasing the concentration in B and P impurities. Neutral impurity Ge has weak effect on dislocation generation and velocity enhancement.",

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N2 - The dynamic interaction between dislocations and impurities B, P and Ge in Si with concentrations up to 2.5×1020cm-3 is investigated by the etch-pit technique, in comparison with that of O impurity in Si. Dislocation generation from a surface scratch is strongly suppressed when the concentration of B and P impurities exceeds 1×10 19cm-3, originating from the immobilization by preferential impurity segregation. Dislocation velocity in motion enhances on increasing the concentration in B and P impurities. Neutral impurity Ge has weak effect on dislocation generation and velocity enhancement.

AB - The dynamic interaction between dislocations and impurities B, P and Ge in Si with concentrations up to 2.5×1020cm-3 is investigated by the etch-pit technique, in comparison with that of O impurity in Si. Dislocation generation from a surface scratch is strongly suppressed when the concentration of B and P impurities exceeds 1×10 19cm-3, originating from the immobilization by preferential impurity segregation. Dislocation velocity in motion enhances on increasing the concentration in B and P impurities. Neutral impurity Ge has weak effect on dislocation generation and velocity enhancement.

KW - Dislocation-impurity interaction

KW - Immobilization

KW - Mobility

KW - Si

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