Abstract
The dynamic interaction between dislocations and impurities B, P and Ge in Si with concentrations up to 2.5×1020cm-3 is investigated by the etch-pit technique, in comparison with that of O impurity in Si. Dislocation generation from a surface scratch is strongly suppressed when the concentration of B and P impurities exceeds 1×10 19cm-3, originating from the immobilization by preferential impurity segregation. Dislocation velocity in motion enhances on increasing the concentration in B and P impurities. Neutral impurity Ge has weak effect on dislocation generation and velocity enhancement.
Original language | English |
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Pages (from-to) | 355-358 |
Number of pages | 4 |
Journal | Materials Science in Semiconductor Processing |
Volume | 6 |
Issue number | 5-6 |
DOIs | |
Publication status | Published - 2003 Oct 1 |
Keywords
- Dislocation-impurity interaction
- Immobilization
- Mobility
- Si
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering