Dislocation-impurity interaction in Si

Ichiro Yonenaga

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


The dynamic interaction between dislocations and impurities B, P and Ge in Si with concentrations up to 2.5×1020cm-3 is investigated by the etch-pit technique, in comparison with that of O impurity in Si. Dislocation generation from a surface scratch is strongly suppressed when the concentration of B and P impurities exceeds 1×10 19cm-3, originating from the immobilization by preferential impurity segregation. Dislocation velocity in motion enhances on increasing the concentration in B and P impurities. Neutral impurity Ge has weak effect on dislocation generation and velocity enhancement.

Original languageEnglish
Pages (from-to)355-358
Number of pages4
JournalMaterials Science in Semiconductor Processing
Issue number5-6
Publication statusPublished - 2003 Oct 1


  • Dislocation-impurity interaction
  • Immobilization
  • Mobility
  • Si

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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