TY - JOUR
T1 - Dislocation-impurity interaction in Czochralski-grown Si heavily doped with B and Ge
AU - Yonenaga, Ichiro
AU - Taishi, T.
AU - Huang, X.
AU - Hoshikawa, K.
PY - 2005/2/15
Y1 - 2005/2/15
N2 - Dynamic interaction between dislocations and impurities in Si is investigated by using X-ray topography and the etch-pit technique from the viewpoint of Czochralski growth of Si crystals. Dislocation generation is effectively suppressed by doping of B and co-doping of B and Ge, which is originating in the immobilization of dislocations by preferential segregation of impurities. Dislocation velocity in motion is enhanced by increasing the concentration in B impurities. Change of the lattice parameter due to the impurity doping leads to the generation of misfit dislocations at the seed/crystal interface.
AB - Dynamic interaction between dislocations and impurities in Si is investigated by using X-ray topography and the etch-pit technique from the viewpoint of Czochralski growth of Si crystals. Dislocation generation is effectively suppressed by doping of B and co-doping of B and Ge, which is originating in the immobilization of dislocations by preferential segregation of impurities. Dislocation velocity in motion is enhanced by increasing the concentration in B impurities. Change of the lattice parameter due to the impurity doping leads to the generation of misfit dislocations at the seed/crystal interface.
KW - A1. Dislocation-impurity interaction
KW - A2. Czochralski method
KW - B2. Semiconducting silicon
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U2 - 10.1016/j.jcrysgro.2004.11.077
DO - 10.1016/j.jcrysgro.2004.11.077
M3 - Conference article
AN - SCOPUS:15844428735
VL - 275
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-2
ER -