Dislocation-impurity interaction in Czochralski-grown Si heavily doped with B and Ge

Ichiro Yonenaga, T. Taishi, X. Huang, K. Hoshikawa

Research output: Contribution to journalConference articlepeer-review

10 Citations (Scopus)

Abstract

Dynamic interaction between dislocations and impurities in Si is investigated by using X-ray topography and the etch-pit technique from the viewpoint of Czochralski growth of Si crystals. Dislocation generation is effectively suppressed by doping of B and co-doping of B and Ge, which is originating in the immobilization of dislocations by preferential segregation of impurities. Dislocation velocity in motion is enhanced by increasing the concentration in B impurities. Change of the lattice parameter due to the impurity doping leads to the generation of misfit dislocations at the seed/crystal interface.

Original languageEnglish
JournalJournal of Crystal Growth
Volume275
Issue number1-2
DOIs
Publication statusPublished - 2005 Feb 15

Keywords

  • A1. Dislocation-impurity interaction
  • A2. Czochralski method
  • B2. Semiconducting silicon

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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