Dislocation-free InGaAs on Si(111) using micro-channel selective-area metalorganic vapor phase epitaxy

Momoko Deura, Takuya Hoshii, Takahisa Yamamoto, Yuichi Ikuhara, Mitsuru Takenaka, Shinichi Takagi, Yoshiaki Nakano, Masakazu Sugiyama

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We have obtained a dislocation-free InGaAs layer on Si(111) using micro-channel selective-area metalorganic vapor phase epitaxy. By increasing the supply of the Ga precursor, we removed rotational twins, which have been observed in III-V layers on (111) substrates. From analysis of the atomic structure, the Ga content in the crystal was found to increase gradually as the growth proceeded. This increase resulted in growth in a tilted direction from [111] and extinction of twins. It was concluded that a twin-free InGaAs layer can be obtained when a Ga-rich layer is inserted in the middle of the growth.

Original languageEnglish
Pages (from-to)111011-111013
Number of pages3
JournalApplied Physics Express
Volume2
Issue number1
DOIs
Publication statusPublished - 2009 Jan 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Deura, M., Hoshii, T., Yamamoto, T., Ikuhara, Y., Takenaka, M., Takagi, S., Nakano, Y., & Sugiyama, M. (2009). Dislocation-free InGaAs on Si(111) using micro-channel selective-area metalorganic vapor phase epitaxy. Applied Physics Express, 2(1), 111011-111013. https://doi.org/10.1143/APEX.2.011101