Abstract
Dislocation-free silicon crystals which underwent boron and phosphorus doping were grown by the Czochralski (CZ) method without Dash necking. The boron concentration limit in a silicon seed 7 × 7 mm2 in cross section without dislocations due to thermal shock was 1 × 1018 atoms/cm3 in ordinary CZ silicon-crystal growth. The maximum admissible discrepancy of boron concentration in the seed and grown crystal was 7 × 1018 atoms/cm3 without dislocations due to lattice misfit in the grown crystal. Silicon seeds with a boron concentration of 3 × 1018 atoms/cm3 were used to grow CZ silicon crystals from lightly boron-doped (p-type) or phosphorus-doped (n-type) silicon melt, yielding dislocation-free silicon crystals without the need for Dash necking. Heavily boron-doped silicon seed should thus be applicable in growing other practical lightly doped dislocation-free CZ-silicon crystals without the need for Dash necking.
Original language | English |
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Pages (from-to) | 12-17 |
Number of pages | 6 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 40 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2001 Jan |
Externally published | Yes |
Keywords
- Czochralski method
- Dash necking
- Dislocation-free
- Heavily boron doped
- Lattice misfit
- Lightly doped
- Si crystal
- Thermal shock
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)