Dislocation-free Czochralski silicon crystal growth without Dash necking

Xinming Huang, Toshinori Taishi, Ichiro Yonenaga, Keigo Hoshikawa

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)

Abstract

Dislocation-free silicon crystals which underwent boron and phosphorus doping were grown by the Czochralski (CZ) method without Dash necking. The boron concentration limit in a silicon seed 7 × 7 mm2 in cross section without dislocations due to thermal shock was 1 × 1018 atoms/cm3 in ordinary CZ silicon-crystal growth. The maximum admissible discrepancy of boron concentration in the seed and grown crystal was 7 × 1018 atoms/cm3 without dislocations due to lattice misfit in the grown crystal. Silicon seeds with a boron concentration of 3 × 1018 atoms/cm3 were used to grow CZ silicon crystals from lightly boron-doped (p-type) or phosphorus-doped (n-type) silicon melt, yielding dislocation-free silicon crystals without the need for Dash necking. Heavily boron-doped silicon seed should thus be applicable in growing other practical lightly doped dislocation-free CZ-silicon crystals without the need for Dash necking.

Original languageEnglish
Pages (from-to)12-17
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number1
DOIs
Publication statusPublished - 2001 Jan

Keywords

  • Czochralski method
  • Dash necking
  • Dislocation-free
  • Heavily boron doped
  • Lattice misfit
  • Lightly doped
  • Si crystal
  • Thermal shock

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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