Dislocation-free B-doped Si crystal growth without Dash necking in Czochralski method: Influence of B concentration

Xinming Huang, Toshinori Taishi, Ichiro Yonenaga, Keigo Hoshikawa

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)

Abstract

Dislocation-free Si crystals have been grown successfully from heavily B-doped Si melts by Czochralski (CZ) method without the Dash necking process. No dislocation was introduced in the heavily B-doped Si seed during dipping and no dislocation was generated in the grown crystal due to lattice misfit between the seed and grown crystal when the B concentration is the same in both the Si seed and grown crystal. These results show that the Dash necking process is unnecessary in heavily B-doped Si crystal growth. It is found that the limit of the B concentration in the Si seed for growing dislocation-free CZ-Si crystals without Dash necking is in the order of 1018 atoms/cm3, corresponding to a resistivity of several tens of mΩ cm.

Original languageEnglish
Pages (from-to)283-287
Number of pages5
JournalJournal of Crystal Growth
Volume213
Issue number3-4
DOIs
Publication statusPublished - 2000 Jun 1

Keywords

  • B-doping, Dislocation-free
  • CZ crystal growth
  • Single Si crystal
  • X-ray topography

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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