Abstract
Experimental results on the deformation of silicon crystals reported in a foregoing paper are discussed on the basis of a model and a hypothesis so far proposed. The dependence of the upper and the lower yield stresses on the temperature and the strain‐rate can be described reasonably well by the model of Haasen et al. Origins for some discrepancies between the results of the model and the experiments are discussed. The behaviour of the effective stress in the deformation stage after the middle of stage 0 is well described by the hypothesis of the steady state of deformation proposed by Sumino. The relation between the condition for the lower yield point and that for the steady state of deformation is discussed.
Original language | English |
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Pages (from-to) | 217-226 |
Number of pages | 10 |
Journal | physica status solidi (a) |
Volume | 51 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1979 Jan 16 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics