The dislocation velocities and mechanical strength of bulk crystals of SixGe1-x alloys grown by the Czochralski method have been investigated by the etch pit technique and compressive deformation tests, respectively. Velocity of dislocations in the SiGe alloys of the composition range 0.004 < x < 0.08 decreases monotonically with an increase in Si content at temperature 450-700°C and under stress 3-24MPa. In contrast, velocity of dislocations in the composition range 0.92 < x < 1 first increases, then decreases and again increases with a decrease in Si content at temperature 750-850°C and under stress 3-30MPa. The velocity of dislocations was quantitatively evaluated as functions of stress and temperature. Stress-strain behaviour in the yield region of the SiGe alloys of composition 0 < x < 0.4 is similar to that of Ge at temperatures lower than about 600°C. However, the yield stress becomes temperature-insensitive at high temperatures and increases with increasing Si content. The stress-strain curves of the SiGe alloys of composition 0.95 < x < 1 are similar to those of pure Si at temperatures 800-1000°C and the yield stress increases with decreasing Si content down to x = 0.95. The yield stress of the SiGe alloys is dependent on the composition, being proportional to x(1-x), showing a maximum around x ≈ 0.5. Built-in stress fields related to local fluctuation of the alloy composition and the dynamic development of a solute atmosphere around the dislocations, may suppress the activities of dislocations and lead to the hardening of SiGe alloys.
|Journal||Journal of Physics: Conference Series|
|Publication status||Published - 2013|
|Event||18th Microscopy of Semiconducting Materials Conference, MSM 2013 - Oxford, United Kingdom|
Duration: 2013 Apr 7 → 2013 Apr 11
ASJC Scopus subject areas
- Physics and Astronomy(all)