Dislocation dynamics in bending deformation of Si

Ichiro Yonenaga, Kazuo Nakajima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Deformation characteristics in high-purity Si crystals subjected to bending tests were studied. Specimens were deformed at the temperatures higher than 800°C without brittle fracture under application of a high stress up to 350 MPa. Stress-strain behavior and the yield stresses depend on the temperature and the strain rate. The results were discussed in terms of the dislocation dynamics and dislocation mobility to provide fundamental knowledge for wafer manufacturing.

Original languageEnglish
Title of host publicationMaterials Integration
PublisherTrans Tech Publications Ltd
Pages357-360
Number of pages4
ISBN (Print)9783037853764
DOIs
Publication statusPublished - 2012
EventInt. Symposium of GCOE: Materials Integration, in Conjunction with the 2nd Int. Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2011 and the 8th Materials Science School for Young Scientists, KINKEN-WAKATE 2011 - Sendai, Japan
Duration: 2011 Dec 12011 Dec 2

Publication series

NameKey Engineering Materials
Volume508
ISSN (Print)1013-9826
ISSN (Electronic)1662-9795

Other

OtherInt. Symposium of GCOE: Materials Integration, in Conjunction with the 2nd Int. Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2011 and the 8th Materials Science School for Young Scientists, KINKEN-WAKATE 2011
CountryJapan
CitySendai
Period11/12/111/12/2

Keywords

  • Bending deformation
  • Dislocation dynamics
  • Dislocation velocity
  • Silicon

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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