Dislocation distribution in a strain-relaxed SiGe thin film grown on an ion-implanted Si substrate

Junji Yamanaka; Kentaro Sawano; Kumiko Suzuki; Kiyokazu Nakagawa; Yusuke Ozawa; Takeo Hattori; Yasuhiro Shiraki

doi:10.1016/j.tsf.2005.08.392

Dislocation distribution in a strain-relaxed SiGe thin film grown on an ion-implanted Si substrate

Junji Yamanaka, Kentaro Sawano, Kumiko Suzuki, Kiyokazu Nakagawa, Yusuke Ozawa, Takeo Hattori, Yasuhiro Shiraki

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We produced a strain-relaxed SiGe thin film on a Si substrate using the method we proposed recently: we implanted Ar ions into Si substrates and then grew 100-nm-thick Si_0.8Ge_0.2 at 500 °C by the solid source molecular beam epitaxy method followed by an annealing at 900 °C for 2 h. Then we observed the distribution of dislocations both in the SiGe and Si from three different crystallographic directions by transmission electron microscopy. There are threading dislocations in the SiGe layer. However, it was also revealed that a large number of dislocations were localized around the SiGe/Si interface and it can be concluded that the dislocations around the interface mainly contribute to relax the SiGe.

Original language	English
Pages (from-to)	103-106
Number of pages	4
Journal	Thin Solid Films
Volume	508
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.08.392
Publication status	Published - 2006 Jun 5

Keywords

Ion implantation
SiGe
Strain relaxation
Strained Si

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Dislocation distribution in a strain-relaxed SiGe thin film grown on an ion-implanted Si substrate",

abstract = "We produced a strain-relaxed SiGe thin film on a Si substrate using the method we proposed recently: we implanted Ar ions into Si substrates and then grew 100-nm-thick Si0.8Ge0.2 at 500 °C by the solid source molecular beam epitaxy method followed by an annealing at 900 °C for 2 h. Then we observed the distribution of dislocations both in the SiGe and Si from three different crystallographic directions by transmission electron microscopy. There are threading dislocations in the SiGe layer. However, it was also revealed that a large number of dislocations were localized around the SiGe/Si interface and it can be concluded that the dislocations around the interface mainly contribute to relax the SiGe.",

keywords = "Ion implantation, SiGe, Strain relaxation, Strained Si",

author = "Junji Yamanaka and Kentaro Sawano and Kumiko Suzuki and Kiyokazu Nakagawa and Yusuke Ozawa and Takeo Hattori and Yasuhiro Shiraki",

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T1 - Dislocation distribution in a strain-relaxed SiGe thin film grown on an ion-implanted Si substrate

AU - Yamanaka, Junji

AU - Sawano, Kentaro

AU - Suzuki, Kumiko

AU - Nakagawa, Kiyokazu

AU - Ozawa, Yusuke

AU - Hattori, Takeo

AU - Shiraki, Yasuhiro

PY - 2006/6/5

Y1 - 2006/6/5

N2 - We produced a strain-relaxed SiGe thin film on a Si substrate using the method we proposed recently: we implanted Ar ions into Si substrates and then grew 100-nm-thick Si0.8Ge0.2 at 500 °C by the solid source molecular beam epitaxy method followed by an annealing at 900 °C for 2 h. Then we observed the distribution of dislocations both in the SiGe and Si from three different crystallographic directions by transmission electron microscopy. There are threading dislocations in the SiGe layer. However, it was also revealed that a large number of dislocations were localized around the SiGe/Si interface and it can be concluded that the dislocations around the interface mainly contribute to relax the SiGe.

AB - We produced a strain-relaxed SiGe thin film on a Si substrate using the method we proposed recently: we implanted Ar ions into Si substrates and then grew 100-nm-thick Si0.8Ge0.2 at 500 °C by the solid source molecular beam epitaxy method followed by an annealing at 900 °C for 2 h. Then we observed the distribution of dislocations both in the SiGe and Si from three different crystallographic directions by transmission electron microscopy. There are threading dislocations in the SiGe layer. However, it was also revealed that a large number of dislocations were localized around the SiGe/Si interface and it can be concluded that the dislocations around the interface mainly contribute to relax the SiGe.

KW - Ion implantation

KW - SiGe

KW - Strain relaxation

KW - Strained Si

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