Abstract
Dislocations in deformed Ge1-xSix alloys in the whole range 0 < x < 1 have been investigated by means of weak-beam transmission electron microscopy. They are dissociated into Shockley partial dislocations bounding intrinsic stacking-faults. The intrinsic stacking-fault energy in the alloys decreases from 61 ± 10 to 55 ± 10 mJ m-2 with increasing Si content.
Original language | English |
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Pages (from-to) | 193-197 |
Number of pages | 5 |
Journal | Philosophical Magazine Letters |
Volume | 80 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2000 Apr |
ASJC Scopus subject areas
- Condensed Matter Physics