Dislocation dissociation and stacking-fault energies in Ge1-xSix alloys

I. Yonenaga; S. H. Lim; D. Shindo

doi:10.1080/095008300176155

Dislocation dissociation and stacking-fault energies in Ge_1-xSi_x alloys

I. Yonenaga, S. H. Lim, D. Shindo

Materials Design Division

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Dislocations in deformed Ge_1-xSi_x alloys in the whole range 0 < x < 1 have been investigated by means of weak-beam transmission electron microscopy. They are dissociated into Shockley partial dislocations bounding intrinsic stacking-faults. The intrinsic stacking-fault energy in the alloys decreases from 61 ± 10 to 55 ± 10 mJ m^-2 with increasing Si content.

Original language	English
Pages (from-to)	193-197
Number of pages	5
Journal	Philosophical Magazine Letters
Volume	80
Issue number	4
DOIs	https://doi.org/10.1080/095008300176155
Publication status	Published - 2000 Apr

ASJC Scopus subject areas

Condensed Matter Physics

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10.1080/095008300176155

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title = "Dislocation dissociation and stacking-fault energies in Ge1-xSix alloys",

abstract = "Dislocations in deformed Ge1-xSix alloys in the whole range 0 < x < 1 have been investigated by means of weak-beam transmission electron microscopy. They are dissociated into Shockley partial dislocations bounding intrinsic stacking-faults. The intrinsic stacking-fault energy in the alloys decreases from 61 ± 10 to 55 ± 10 mJ m-2 with increasing Si content.",

author = "I. Yonenaga and Lim, {S. H.} and D. Shindo",

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N2 - Dislocations in deformed Ge1-xSix alloys in the whole range 0 < x < 1 have been investigated by means of weak-beam transmission electron microscopy. They are dissociated into Shockley partial dislocations bounding intrinsic stacking-faults. The intrinsic stacking-fault energy in the alloys decreases from 61 ± 10 to 55 ± 10 mJ m-2 with increasing Si content.

AB - Dislocations in deformed Ge1-xSix alloys in the whole range 0 < x < 1 have been investigated by means of weak-beam transmission electron microscopy. They are dissociated into Shockley partial dislocations bounding intrinsic stacking-faults. The intrinsic stacking-fault energy in the alloys decreases from 61 ± 10 to 55 ± 10 mJ m-2 with increasing Si content.

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Dislocation dissociation and stacking-fault energies in Ge_1-xSi_x alloys

Abstract

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