Dislocations in deformed Ge1-xSix alloys in the whole range 0 < x < 1 have been investigated by means of weak-beam transmission electron microscopy. They are dissociated into Shockley partial dislocations bounding intrinsic stacking-faults. The intrinsic stacking-fault energy in the alloys decreases from 61 ± 10 to 55 ± 10 mJ m-2 with increasing Si content.
ASJC Scopus subject areas
- Condensed Matter Physics