Dislocation dissociation and stacking-fault energies in Ge1-xSix alloys

I. Yonenaga, S. H. Lim, D. Shindo

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

Dislocations in deformed Ge1-xSix alloys in the whole range 0 < x < 1 have been investigated by means of weak-beam transmission electron microscopy. They are dissociated into Shockley partial dislocations bounding intrinsic stacking-faults. The intrinsic stacking-fault energy in the alloys decreases from 61 ± 10 to 55 ± 10 mJ m-2 with increasing Si content.

Original languageEnglish
Pages (from-to)193-197
Number of pages5
JournalPhilosophical Magazine Letters
Volume80
Issue number4
DOIs
Publication statusPublished - 2000 Apr

ASJC Scopus subject areas

  • Condensed Matter Physics

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