Dislocation behavior in highly impurity-doped Si

I. Yonenaga

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The dynamic behavior of dislocations in highly impurity-doped Si crystals is investigated. Suppression of the generation of dislocations from a surface scratch is found for Si doped with B and P with a concentration higher than 1 × 1019 cm-3 and the critical stress for dislocation generation increases with B and P concentration which is interpreted in terms of dislocation locking due to impurity segregation. The velocity of dislocations in B- and P-doped crystals increases with increasing B and P concentration, respectively.

Original languageEnglish
Pages (from-to)285-288
Number of pages4
JournalJournal of Materials Science: Materials in Electronics
Volume12
Issue number4-6
DOIs
Publication statusPublished - 2001 Apr 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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