Dislocation behavior in heavily impurity doped Si

I. Yonenaga

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


The dynamic behavior of dislocations in heavily impurity doped Si is investigated. Dislocation generation from a surface scratch is suppressed when the impurity concentration exceeds 1×1019 cm-3, which is interpreted in terms of dislocation locking due to impurity segregation. Dislocation velocity increases by increasing the impurity concentration.

Original languageEnglish
Pages (from-to)1267-1272
Number of pages6
JournalScripta Materialia
Issue number11
Publication statusPublished - 2001 Nov 3


  • Dislocation mobility
  • Dislocations
  • Elemental semiconductor
  • Impurity
  • Segregation

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys


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