TY - JOUR
T1 - Dislocation behavior in heavily germanium-doped silicon crystal
AU - Taishi, Toshinori
AU - Huang, Xinming
AU - Yonenaga, Ichiro
AU - Hoshikawa, Keigo
N1 - Funding Information:
This work was supported by JSPS Research for the Venture SME-University Research Promotion Program. This work was also supported in part by Grants-in-Aid for Scientific Research (13450010) from the Ministry of Education, Science, Sports and Culture.
PY - 2002
Y1 - 2002
N2 - Dislocation-free heavily Ge-doped Czochralski (CZ)-Si crystal growth using a heavily Ge-doped Si seed has been investigated. Dislocations due to thermal shock were suppressed in a seed 7×7mm2 in cross-section when Ge concentration in the seed exceeded 9×1019 atoms/cm3. When Ge concentration in the grown crystal was 5.7×1020 atoms/cm3, cellular growth occurred, and this concentration was a limit for heavily Ge-doped Si single crystal growth with a growth rate of about 1mm/min. Resistivity in the crystal results in B or P doping could be controlled precisely in spite of using a heavily Ge-doped Si seed for growing a dislocation-free CZ-Si crystal without Dash necking.
AB - Dislocation-free heavily Ge-doped Czochralski (CZ)-Si crystal growth using a heavily Ge-doped Si seed has been investigated. Dislocations due to thermal shock were suppressed in a seed 7×7mm2 in cross-section when Ge concentration in the seed exceeded 9×1019 atoms/cm3. When Ge concentration in the grown crystal was 5.7×1020 atoms/cm3, cellular growth occurred, and this concentration was a limit for heavily Ge-doped Si single crystal growth with a growth rate of about 1mm/min. Resistivity in the crystal results in B or P doping could be controlled precisely in spite of using a heavily Ge-doped Si seed for growing a dislocation-free CZ-Si crystal without Dash necking.
KW - Cz-Si crystal growth
KW - Heavy Ge doping in Si
KW - X-ray topography
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U2 - 10.1016/S1369-8001(02)00128-2
DO - 10.1016/S1369-8001(02)00128-2
M3 - Article
AN - SCOPUS:0036962272
VL - 5
SP - 409
EP - 412
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
SN - 1369-8001
IS - 4-5 SPEC.
ER -