Dislocation behavior in heavily germanium-doped silicon crystal

Toshinori Taishi, Xinming Huang, Ichiro Yonenaga, Keigo Hoshikawa

Research output: Contribution to journalArticlepeer-review

47 Citations (Scopus)

Abstract

Dislocation-free heavily Ge-doped Czochralski (CZ)-Si crystal growth using a heavily Ge-doped Si seed has been investigated. Dislocations due to thermal shock were suppressed in a seed 7×7mm2 in cross-section when Ge concentration in the seed exceeded 9×1019 atoms/cm3. When Ge concentration in the grown crystal was 5.7×1020 atoms/cm3, cellular growth occurred, and this concentration was a limit for heavily Ge-doped Si single crystal growth with a growth rate of about 1mm/min. Resistivity in the crystal results in B or P doping could be controlled precisely in spite of using a heavily Ge-doped Si seed for growing a dislocation-free CZ-Si crystal without Dash necking.

Original languageEnglish
Pages (from-to)409-412
Number of pages4
JournalMaterials Science in Semiconductor Processing
Volume5
Issue number4-5 SPEC.
DOIs
Publication statusPublished - 2002

Keywords

  • Cz-Si crystal growth
  • Heavy Ge doping in Si
  • X-ray topography

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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