Dislocation behavior in heavily germanium-doped silicon crystal

Toshinori Taishi; Xinming Huang; Ichiro Yonenaga; Keigo Hoshikawa

doi:10.1016/S1369-8001(02)00128-2

Dislocation behavior in heavily germanium-doped silicon crystal

Toshinori Taishi, Xinming Huang, Ichiro Yonenaga, Keigo Hoshikawa

Materials Design Division

Research output: Contribution to journal › Article › peer-review

47 Citations (Scopus)

Abstract

Dislocation-free heavily Ge-doped Czochralski (CZ)-Si crystal growth using a heavily Ge-doped Si seed has been investigated. Dislocations due to thermal shock were suppressed in a seed 7×7mm² in cross-section when Ge concentration in the seed exceeded 9×10¹⁹ atoms/cm³. When Ge concentration in the grown crystal was 5.7×10²⁰ atoms/cm³, cellular growth occurred, and this concentration was a limit for heavily Ge-doped Si single crystal growth with a growth rate of about 1mm/min. Resistivity in the crystal results in B or P doping could be controlled precisely in spite of using a heavily Ge-doped Si seed for growing a dislocation-free CZ-Si crystal without Dash necking.

Original language	English
Pages (from-to)	409-412
Number of pages	4
Journal	Materials Science in Semiconductor Processing
Volume	5
Issue number	4-5 SPEC.
DOIs	https://doi.org/10.1016/S1369-8001(02)00128-2
Publication status	Published - 2002

Keywords

Cz-Si crystal growth
Heavy Ge doping in Si
X-ray topography

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{b85535ae0cca4c4ab09ffad768a40c5f,

title = "Dislocation behavior in heavily germanium-doped silicon crystal",

abstract = "Dislocation-free heavily Ge-doped Czochralski (CZ)-Si crystal growth using a heavily Ge-doped Si seed has been investigated. Dislocations due to thermal shock were suppressed in a seed 7×7mm2 in cross-section when Ge concentration in the seed exceeded 9×1019 atoms/cm3. When Ge concentration in the grown crystal was 5.7×1020 atoms/cm3, cellular growth occurred, and this concentration was a limit for heavily Ge-doped Si single crystal growth with a growth rate of about 1mm/min. Resistivity in the crystal results in B or P doping could be controlled precisely in spite of using a heavily Ge-doped Si seed for growing a dislocation-free CZ-Si crystal without Dash necking.",

keywords = "Cz-Si crystal growth, Heavy Ge doping in Si, X-ray topography",

author = "Toshinori Taishi and Xinming Huang and Ichiro Yonenaga and Keigo Hoshikawa",

note = "Funding Information: This work was supported by JSPS Research for the Venture SME-University Research Promotion Program. This work was also supported in part by Grants-in-Aid for Scientific Research (13450010) from the Ministry of Education, Science, Sports and Culture.",

year = "2002",

doi = "10.1016/S1369-8001(02)00128-2",

language = "English",

volume = "5",

pages = "409--412",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Limited",

number = "4-5 SPEC.",

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TY - JOUR

T1 - Dislocation behavior in heavily germanium-doped silicon crystal

AU - Taishi, Toshinori

AU - Huang, Xinming

AU - Yonenaga, Ichiro

AU - Hoshikawa, Keigo

N1 - Funding Information: This work was supported by JSPS Research for the Venture SME-University Research Promotion Program. This work was also supported in part by Grants-in-Aid for Scientific Research (13450010) from the Ministry of Education, Science, Sports and Culture.

PY - 2002

Y1 - 2002

N2 - Dislocation-free heavily Ge-doped Czochralski (CZ)-Si crystal growth using a heavily Ge-doped Si seed has been investigated. Dislocations due to thermal shock were suppressed in a seed 7×7mm2 in cross-section when Ge concentration in the seed exceeded 9×1019 atoms/cm3. When Ge concentration in the grown crystal was 5.7×1020 atoms/cm3, cellular growth occurred, and this concentration was a limit for heavily Ge-doped Si single crystal growth with a growth rate of about 1mm/min. Resistivity in the crystal results in B or P doping could be controlled precisely in spite of using a heavily Ge-doped Si seed for growing a dislocation-free CZ-Si crystal without Dash necking.

AB - Dislocation-free heavily Ge-doped Czochralski (CZ)-Si crystal growth using a heavily Ge-doped Si seed has been investigated. Dislocations due to thermal shock were suppressed in a seed 7×7mm2 in cross-section when Ge concentration in the seed exceeded 9×1019 atoms/cm3. When Ge concentration in the grown crystal was 5.7×1020 atoms/cm3, cellular growth occurred, and this concentration was a limit for heavily Ge-doped Si single crystal growth with a growth rate of about 1mm/min. Resistivity in the crystal results in B or P doping could be controlled precisely in spite of using a heavily Ge-doped Si seed for growing a dislocation-free CZ-Si crystal without Dash necking.

KW - Cz-Si crystal growth

KW - Heavy Ge doping in Si

KW - X-ray topography

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U2 - 10.1016/S1369-8001(02)00128-2

DO - 10.1016/S1369-8001(02)00128-2

M3 - Article

AN - SCOPUS:0036962272

VL - 5

SP - 409

EP - 412

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

IS - 4-5 SPEC.

ER -

Dislocation behavior in heavily germanium-doped silicon crystal

Abstract

Keywords

ASJC Scopus subject areas

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