TY - GEN
T1 - Dislocation arrays in sapphire using femtosecond laser irradiation
AU - Moon, Chiwon
AU - Kanehira, Shingo
AU - Miura, Kiyotaka
AU - Tochigi, Eita
AU - Shibata, Naoya
AU - Ikuhara, Yuichi
AU - Hirao, Kazuyuki
PY - 2010/10/15
Y1 - 2010/10/15
N2 - We investigated the formation mechanism and thermal behaviors of defects which were introduced at a microscopic area inside (1120) sapphire using femtosecond laser. Cracks were formed at the focal point along the {1102} and the {1100} planes by the laser irradiation. The preferential crack formation on these planes was attributed to the different fracture surface energy between the crystallographic planes of sapphire. The cracks transformed into the array of discrete pores by the subsequent heat treatment above 1300 °C, which was due to the diffusive crack healing process. In addition, dislocations were also introduced at the interface between closed cracks.
AB - We investigated the formation mechanism and thermal behaviors of defects which were introduced at a microscopic area inside (1120) sapphire using femtosecond laser. Cracks were formed at the focal point along the {1102} and the {1100} planes by the laser irradiation. The preferential crack formation on these planes was attributed to the different fracture surface energy between the crystallographic planes of sapphire. The cracks transformed into the array of discrete pores by the subsequent heat treatment above 1300 °C, which was due to the diffusive crack healing process. In addition, dislocations were also introduced at the interface between closed cracks.
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M3 - Conference contribution
AN - SCOPUS:77957782180
SN - 9781617387593
T3 - Materials Research Society Symposium Proceedings
SP - 13
EP - 17
BT - Nanoscale Pattern Formation
T2 - 2009 MRS Fall Meeting
Y2 - 30 November 2009 through 4 December 2009
ER -