TY - GEN
T1 - Discussion of millimeter wave FBAR with very thin A1N film fabricated using MOCVD method
AU - Tanifuji, Shoichi
AU - Aota, Yuji
AU - Kameda, Suguru
AU - Takagi, Tadashi
AU - Tsubouchi, Kazuo
PY - 2009
Y1 - 2009
N2 - We discuss millimeter-wave film bulk acoustic resonator (FBAR) with very thin aluminium nitride (AlN) film fabricated using metal organic chemical vapor deposition (MOCVD) method. In previous works, we have successfully grown c-axis oriented AlN film using MOCVD method on Ru/Ta/SiO2/Si substrate. In this paper, we grew excellent orientation films of AlN and Ru electrodes in MOCVD, although their film thickness were very thin. Experimental results show that full width at half maximum (FWHM) is 1.3° at AlN thickness of 30 nm. In calculating analysis, when both top and bottom electrode thicknesses were 20 nm and AlN thickness was 30 nm, we obtained that resonant frequency was higher than 50 GHz. Therefore, FBAR is possible to apply to millimeter-wave bands devices, also contribute to small-size, low power consumption and low cost for millimeter-wave terminals.
AB - We discuss millimeter-wave film bulk acoustic resonator (FBAR) with very thin aluminium nitride (AlN) film fabricated using metal organic chemical vapor deposition (MOCVD) method. In previous works, we have successfully grown c-axis oriented AlN film using MOCVD method on Ru/Ta/SiO2/Si substrate. In this paper, we grew excellent orientation films of AlN and Ru electrodes in MOCVD, although their film thickness were very thin. Experimental results show that full width at half maximum (FWHM) is 1.3° at AlN thickness of 30 nm. In calculating analysis, when both top and bottom electrode thicknesses were 20 nm and AlN thickness was 30 nm, we obtained that resonant frequency was higher than 50 GHz. Therefore, FBAR is possible to apply to millimeter-wave bands devices, also contribute to small-size, low power consumption and low cost for millimeter-wave terminals.
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U2 - 10.1109/ULTSYM.2009.5441657
DO - 10.1109/ULTSYM.2009.5441657
M3 - Conference contribution
AN - SCOPUS:77952810685
SN - 9781424443895
T3 - Proceedings - IEEE Ultrasonics Symposium
SP - 2170
EP - 2173
BT - 2009 IEEE International Ultrasonics Symposium and Short Courses, IUS 2009
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2009 IEEE International Ultrasonics Symposium, IUS 2009
Y2 - 20 September 2009 through 23 September 2009
ER -