Discussion of millimeter wave FBAR with very thin A1N film fabricated using MOCVD method

Shoichi Tanifuji, Yuji Aota, Suguru Kameda, Tadashi Takagi, Kazuo Tsubouchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

We discuss millimeter-wave film bulk acoustic resonator (FBAR) with very thin aluminium nitride (AlN) film fabricated using metal organic chemical vapor deposition (MOCVD) method. In previous works, we have successfully grown c-axis oriented AlN film using MOCVD method on Ru/Ta/SiO2/Si substrate. In this paper, we grew excellent orientation films of AlN and Ru electrodes in MOCVD, although their film thickness were very thin. Experimental results show that full width at half maximum (FWHM) is 1.3° at AlN thickness of 30 nm. In calculating analysis, when both top and bottom electrode thicknesses were 20 nm and AlN thickness was 30 nm, we obtained that resonant frequency was higher than 50 GHz. Therefore, FBAR is possible to apply to millimeter-wave bands devices, also contribute to small-size, low power consumption and low cost for millimeter-wave terminals.

Original languageEnglish
Title of host publication2009 IEEE International Ultrasonics Symposium and Short Courses, IUS 2009
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2170-2173
Number of pages4
ISBN (Print)9781424443895
DOIs
Publication statusPublished - 2009
Event2009 IEEE International Ultrasonics Symposium, IUS 2009 - Rome, Italy
Duration: 2009 Sep 202009 Sep 23

Publication series

NameProceedings - IEEE Ultrasonics Symposium
ISSN (Print)1051-0117

Other

Other2009 IEEE International Ultrasonics Symposium, IUS 2009
CountryItaly
CityRome
Period09/9/2009/9/23

ASJC Scopus subject areas

  • Acoustics and Ultrasonics

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