Discrimination between gate-induced electrostatic and electrochemical characteristics in insulator-to-metal transition of manganite thin films

Takuro Nakamura; Azusa N. Hattori; Thi Van Anh Nguyen; Kohei Fujiwara; Hidekazu Tanaka

doi:10.7567/APEX.8.073201

Discrimination between gate-induced electrostatic and electrochemical characteristics in insulator-to-metal transition of manganite thin films

Takuro Nakamura, Azusa N. Hattori, Thi Van Anh Nguyen, Kohei Fujiwara, Hidekazu Tanaka

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We propose a method of discriminating whether the gating effect is electrostatic or electrochemical on an electric double-layer transistor (EDLT), which can be a good guideline for examining the nature of EDLTs. The electrochemical effect between a channel and an ionic liquid depends on the gate voltage (V_G). Our study on the dependence of the transport properties of a (La_0.525Pr_0.1Ca_0.375)MnO₃ (LPCMO) EDLT on V_G revealed that the electrostatic effect is dominant below |V_G| = 2 V, whereas the electrochemical effect is dominant at higher voltages. The modulation of the insulator-to-metal transition property of LPCMO was realized through the electrostatic effect.

Original language	English
Article number	073201
Journal	Applied Physics Express
Volume	8
Issue number	7
DOIs	https://doi.org/10.7567/APEX.8.073201
Publication status	Published - 2015 Jul 1
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Discrimination between gate-induced electrostatic and electrochemical characteristics in insulator-to-metal transition of manganite thin films. / Nakamura, Takuro; Hattori, Azusa N.; Nguyen, Thi Van Anh ; Fujiwara, Kohei; Tanaka, Hidekazu.

In: Applied Physics Express, Vol. 8, No. 7, 073201, 01.07.2015.

Research output: Contribution to journal › Article › peer-review

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Discrimination between gate-induced electrostatic and electrochemical characteristics in insulator-to-metal transition of manganite thin films

Abstract

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