Discrimination between gate-induced electrostatic and electrochemical characteristics in insulator-to-metal transition of manganite thin films

Takuro Nakamura; Azusa N. Hattori; Thi Van Anh Nguyen; Kohei Fujiwara; Hidekazu Tanaka

doi:10.7567/APEX.8.073201

Discrimination between gate-induced electrostatic and electrochemical characteristics in insulator-to-metal transition of manganite thin films

Takuro Nakamura, Azusa N. Hattori, Thi Van Anh Nguyen, Kohei Fujiwara, Hidekazu Tanaka

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We propose a method of discriminating whether the gating effect is electrostatic or electrochemical on an electric double-layer transistor (EDLT), which can be a good guideline for examining the nature of EDLTs. The electrochemical effect between a channel and an ionic liquid depends on the gate voltage (V_G). Our study on the dependence of the transport properties of a (La_0.525Pr_0.1Ca_0.375)MnO₃ (LPCMO) EDLT on V_G revealed that the electrostatic effect is dominant below |V_G| = 2 V, whereas the electrochemical effect is dominant at higher voltages. The modulation of the insulator-to-metal transition property of LPCMO was realized through the electrostatic effect.

Original language	English
Article number	073201
Journal	Applied Physics Express
Volume	8
Issue number	7
DOIs	https://doi.org/10.7567/APEX.8.073201
Publication status	Published - 2015 Jul 1
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.7567/APEX.8.073201

Cite this

@article{294eac1c135f45fdbd5f427d15c974df,

title = "Discrimination between gate-induced electrostatic and electrochemical characteristics in insulator-to-metal transition of manganite thin films",

abstract = "We propose a method of discriminating whether the gating effect is electrostatic or electrochemical on an electric double-layer transistor (EDLT), which can be a good guideline for examining the nature of EDLTs. The electrochemical effect between a channel and an ionic liquid depends on the gate voltage (VG). Our study on the dependence of the transport properties of a (La0.525Pr0.1Ca0.375)MnO3 (LPCMO) EDLT on VG revealed that the electrostatic effect is dominant below |VG| = 2 V, whereas the electrochemical effect is dominant at higher voltages. The modulation of the insulator-to-metal transition property of LPCMO was realized through the electrostatic effect.",

author = "Takuro Nakamura and Hattori, {Azusa N.} and Nguyen, {Thi Van Anh} and Kohei Fujiwara and Hidekazu Tanaka",

year = "2015",

month = jul,

day = "1",

doi = "10.7567/APEX.8.073201",

language = "English",

volume = "8",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "7",

}

TY - JOUR

T1 - Discrimination between gate-induced electrostatic and electrochemical characteristics in insulator-to-metal transition of manganite thin films

AU - Nakamura, Takuro

AU - Hattori, Azusa N.

AU - Nguyen, Thi Van Anh

AU - Fujiwara, Kohei

AU - Tanaka, Hidekazu

PY - 2015/7/1

Y1 - 2015/7/1

N2 - We propose a method of discriminating whether the gating effect is electrostatic or electrochemical on an electric double-layer transistor (EDLT), which can be a good guideline for examining the nature of EDLTs. The electrochemical effect between a channel and an ionic liquid depends on the gate voltage (VG). Our study on the dependence of the transport properties of a (La0.525Pr0.1Ca0.375)MnO3 (LPCMO) EDLT on VG revealed that the electrostatic effect is dominant below |VG| = 2 V, whereas the electrochemical effect is dominant at higher voltages. The modulation of the insulator-to-metal transition property of LPCMO was realized through the electrostatic effect.

AB - We propose a method of discriminating whether the gating effect is electrostatic or electrochemical on an electric double-layer transistor (EDLT), which can be a good guideline for examining the nature of EDLTs. The electrochemical effect between a channel and an ionic liquid depends on the gate voltage (VG). Our study on the dependence of the transport properties of a (La0.525Pr0.1Ca0.375)MnO3 (LPCMO) EDLT on VG revealed that the electrostatic effect is dominant below |VG| = 2 V, whereas the electrochemical effect is dominant at higher voltages. The modulation of the insulator-to-metal transition property of LPCMO was realized through the electrostatic effect.

UR - http://www.scopus.com/inward/record.url?scp=84936816642&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84936816642&partnerID=8YFLogxK

U2 - 10.7567/APEX.8.073201

DO - 10.7567/APEX.8.073201

M3 - Article

AN - SCOPUS:84936816642

VL - 8

JO - Applied Physics Express

JF - Applied Physics Express

SN - 1882-0778

IS - 7

M1 - 073201

ER -

Discrimination between gate-induced electrostatic and electrochemical characteristics in insulator-to-metal transition of manganite thin films

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this