Direction to improve SiGe BiCMOS technology featuring 200-GHz SiGe HBT and 80-nm gate CMOS

Takashi Hashimoto, Yusuke Nonaka, Tatsuya Tominari, Hiroaki Fujiwara, Kazuaki Tokunaga, Mitsuru Arai, Shinichiro Wada, Tsutomu Udo, Motoshi Seto, Makoto Miura, Hiromi Shimamoto, Katsuyoshi Washio, Hideki Tomioka

Research output: Contribution to journalConference article

28 Citations (Scopus)

Abstract

200-GHz fT SiGe HBTs and 80-nm gate CMOS were successfully integrated using the LP-CVD technique for selective SiGe epitaxial growth. Suppressing base resistance enabled us to achieve fMAx of 227 GHz, corresponding tofT of 201 GHz. Shrunk HBTs of A E=0.15×0.7 μm2 achieved ECL ring oscillator gate delay of 5.3 ps at Ics=1.2 mA. Self-heating effects on junction temperature and device performance were investigated with an emitter-width scaling effect. A low thermal budget HBT process sustains full compatibility with 0.13-μm platforms for large scaled RF ICs.

Original languageEnglish
Pages (from-to)129-132
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 2003 Dec 1
Externally publishedYes
EventIEEE International Electron Devices Meeting - Washington, DC, United States
Duration: 2003 Dec 82003 Dec 10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Direction to improve SiGe BiCMOS technology featuring 200-GHz SiGe HBT and 80-nm gate CMOS'. Together they form a unique fingerprint.

  • Cite this

    Hashimoto, T., Nonaka, Y., Tominari, T., Fujiwara, H., Tokunaga, K., Arai, M., Wada, S., Udo, T., Seto, M., Miura, M., Shimamoto, H., Washio, K., & Tomioka, H. (2003). Direction to improve SiGe BiCMOS technology featuring 200-GHz SiGe HBT and 80-nm gate CMOS. Technical Digest - International Electron Devices Meeting, 129-132.