Direction to improve SiGe BiCMOS technology featuring 200-GHz SiGe HBT and 80-nm gate CMOS

Takashi Hashimoto; Yusuke Nonaka; Tatsuya Tominari; Hiroaki Fujiwara; Kazuaki Tokunaga; Mitsuru Arai; Shinichiro Wada; Tsutomu Udo; Motoshi Seto; Makoto Miura; Hiromi Shimamoto; Katsuyoshi Washio; Hideki Tomioka

Direction to improve SiGe BiCMOS technology featuring 200-GHz SiGe HBT and 80-nm gate CMOS

Takashi Hashimoto, Yusuke Nonaka, Tatsuya Tominari, Hiroaki Fujiwara, Kazuaki Tokunaga, Mitsuru Arai, Shinichiro Wada, Tsutomu Udo, Motoshi Seto, Makoto Miura, Hiromi Shimamoto, Katsuyoshi Washio, Hideki Tomioka

Research output: Contribution to journal › Conference article › peer-review

31 Citations (Scopus)

Abstract

200-GHz f_T SiGe HBTs and 80-nm gate CMOS were successfully integrated using the LP-CVD technique for selective SiGe epitaxial growth. Suppressing base resistance enabled us to achieve f_MAx of 227 GHz, corresponding tof_T of 201 GHz. Shrunk HBTs of A _E=0.15×0.7 μm² achieved ECL ring oscillator gate delay of 5.3 ps at Ics=1.2 mA. Self-heating effects on junction temperature and device performance were investigated with an emitter-width scaling effect. A low thermal budget HBT process sustains full compatibility with 0.13-μm platforms for large scaled RF ICs.

Original language	English
Pages (from-to)	129-132
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 2003 Dec 1
Externally published	Yes
Event	IEEE International Electron Devices Meeting - Washington, DC, United States Duration: 2003 Dec 8 → 2003 Dec 10

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

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title = "Direction to improve SiGe BiCMOS technology featuring 200-GHz SiGe HBT and 80-nm gate CMOS",

abstract = "200-GHz fT SiGe HBTs and 80-nm gate CMOS were successfully integrated using the LP-CVD technique for selective SiGe epitaxial growth. Suppressing base resistance enabled us to achieve fMAx of 227 GHz, corresponding tofT of 201 GHz. Shrunk HBTs of A E=0.15×0.7 μm2 achieved ECL ring oscillator gate delay of 5.3 ps at Ics=1.2 mA. Self-heating effects on junction temperature and device performance were investigated with an emitter-width scaling effect. A low thermal budget HBT process sustains full compatibility with 0.13-μm platforms for large scaled RF ICs.",

author = "Takashi Hashimoto and Yusuke Nonaka and Tatsuya Tominari and Hiroaki Fujiwara and Kazuaki Tokunaga and Mitsuru Arai and Shinichiro Wada and Tsutomu Udo and Motoshi Seto and Makoto Miura and Hiromi Shimamoto and Katsuyoshi Washio and Hideki Tomioka",

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language = "English",

pages = "129--132",

journal = "Technical Digest - International Electron Devices Meeting",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Direction to improve SiGe BiCMOS technology featuring 200-GHz SiGe HBT and 80-nm gate CMOS

AU - Hashimoto, Takashi

AU - Nonaka, Yusuke

AU - Tominari, Tatsuya

AU - Fujiwara, Hiroaki

AU - Tokunaga, Kazuaki

AU - Arai, Mitsuru

AU - Wada, Shinichiro

AU - Udo, Tsutomu

AU - Seto, Motoshi

AU - Miura, Makoto

AU - Shimamoto, Hiromi

AU - Washio, Katsuyoshi

AU - Tomioka, Hideki

PY - 2003/12/1

Y1 - 2003/12/1

N2 - 200-GHz fT SiGe HBTs and 80-nm gate CMOS were successfully integrated using the LP-CVD technique for selective SiGe epitaxial growth. Suppressing base resistance enabled us to achieve fMAx of 227 GHz, corresponding tofT of 201 GHz. Shrunk HBTs of A E=0.15×0.7 μm2 achieved ECL ring oscillator gate delay of 5.3 ps at Ics=1.2 mA. Self-heating effects on junction temperature and device performance were investigated with an emitter-width scaling effect. A low thermal budget HBT process sustains full compatibility with 0.13-μm platforms for large scaled RF ICs.

AB - 200-GHz fT SiGe HBTs and 80-nm gate CMOS were successfully integrated using the LP-CVD technique for selective SiGe epitaxial growth. Suppressing base resistance enabled us to achieve fMAx of 227 GHz, corresponding tofT of 201 GHz. Shrunk HBTs of A E=0.15×0.7 μm2 achieved ECL ring oscillator gate delay of 5.3 ps at Ics=1.2 mA. Self-heating effects on junction temperature and device performance were investigated with an emitter-width scaling effect. A low thermal budget HBT process sustains full compatibility with 0.13-μm platforms for large scaled RF ICs.

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M3 - Conference article

AN - SCOPUS:0842331408

SN - 0163-1918

SP - 129

EP - 132

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - IEEE International Electron Devices Meeting

Y2 - 8 December 2003 through 10 December 2003

ER -

Direction to improve SiGe BiCMOS technology featuring 200-GHz SiGe HBT and 80-nm gate CMOS

Abstract

ASJC Scopus subject areas

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