DIRECT WRITING OF HIGHLY CONDUCTIVE Mo LINES BY LASER INDUCED CVD.

Fumihiko Uesugi, Hiroyuki Yokoyama, Shunji Kishida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Direct writing of highly conductive Mo lines has been achieved by laser induced photothermal CVD from Mo(CO)//6. The resistivity of deposited Mo lines was as small as 40 mu OMEGA -cm. CVD characteristics have been examined in detail under different CVD conditions. From comparison with photochemical CVD, photothermal CVD superiority for obtaining metallic and highly conductive Mo lines has been clarified.

Original languageEnglish
Title of host publicationConference on Solid State Devices and Materials
PublisherJapan Soc of Applied Physics
Pages193-196
Number of pages4
ISBN (Print)4930813107, 9784930813107
DOIs
Publication statusPublished - 1985

Publication series

NameConference on Solid State Devices and Materials

ASJC Scopus subject areas

  • Engineering(all)

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    Uesugi, F., Yokoyama, H., & Kishida, S. (1985). DIRECT WRITING OF HIGHLY CONDUCTIVE Mo LINES BY LASER INDUCED CVD. In Conference on Solid State Devices and Materials (pp. 193-196). (Conference on Solid State Devices and Materials). Japan Soc of Applied Physics. https://doi.org/10.7567/ssdm.1985.a-3-9