Direct real-time observation of channel potential fluctuation correlated to random telegraph noise of drain current using nanowire MOSFETs with four-probe terminals

K. Ohmori, W. Feng, S. Sato, R. Hettiarachchi, M. Sato, T. Matsuki, K. Kakushima, H. Iwai, K. Yamada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

We have successfully characterized the dynamical fluctuation of electrical potential due to random telegraph noise (RTN) using MOSFETs with extra terminals for potential sensing. Among some cases of potential changes, devices with clear response in the extra terminals were analyzed in detail. It was found RTN can cause the potential fluctuation in the entire channel region. The magnitude of the fluctuation was consistent with those due to Vg in static properties. These results demonstrate the direct observation of channel potential changes due to number fluctuation phenomena.

Original languageEnglish
Title of host publication2011 Symposium on VLSI Technology, VLSIT 2011 - Digest of Technical Papers
Pages202-203
Number of pages2
Publication statusPublished - 2011
Event2011 Symposium on VLSI Technology, VLSIT 2011 - Kyoto, Japan
Duration: 2011 Jun 142011 Jun 16

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other2011 Symposium on VLSI Technology, VLSIT 2011
Country/TerritoryJapan
CityKyoto
Period11/6/1411/6/16

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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