TY - GEN
T1 - Direct real-time observation of channel potential fluctuation correlated to random telegraph noise of drain current using nanowire MOSFETs with four-probe terminals
AU - Ohmori, K.
AU - Feng, W.
AU - Sato, S.
AU - Hettiarachchi, R.
AU - Sato, M.
AU - Matsuki, T.
AU - Kakushima, K.
AU - Iwai, H.
AU - Yamada, K.
PY - 2011
Y1 - 2011
N2 - We have successfully characterized the dynamical fluctuation of electrical potential due to random telegraph noise (RTN) using MOSFETs with extra terminals for potential sensing. Among some cases of potential changes, devices with clear response in the extra terminals were analyzed in detail. It was found RTN can cause the potential fluctuation in the entire channel region. The magnitude of the fluctuation was consistent with those due to Vg in static properties. These results demonstrate the direct observation of channel potential changes due to number fluctuation phenomena.
AB - We have successfully characterized the dynamical fluctuation of electrical potential due to random telegraph noise (RTN) using MOSFETs with extra terminals for potential sensing. Among some cases of potential changes, devices with clear response in the extra terminals were analyzed in detail. It was found RTN can cause the potential fluctuation in the entire channel region. The magnitude of the fluctuation was consistent with those due to Vg in static properties. These results demonstrate the direct observation of channel potential changes due to number fluctuation phenomena.
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M3 - Conference contribution
AN - SCOPUS:80052650012
SN - 9784863481640
T3 - Digest of Technical Papers - Symposium on VLSI Technology
SP - 202
EP - 203
BT - 2011 Symposium on VLSI Technology, VLSIT 2011 - Digest of Technical Papers
T2 - 2011 Symposium on VLSI Technology, VLSIT 2011
Y2 - 14 June 2011 through 16 June 2011
ER -