DIRECT PATTERN FABRICATION ON SILICONE RESIN BY VAPOR PHASE ELECTRON BEAM POLYMERIZATION.

Masao Morita, Saburo Imamura, Toshiaki Tamamura, Osamu Kugure, Kei Murase

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

A new technique for high resolution lithography with a dry-developed multilayer resist system is demonstrated. The technique involves a direct pattern fabrication by electron beam-induced vapor phase graft polymerization. The selective pattern formation in irradiated areas was performed using PMMA or silicone resin as a base film and styrene as a grafting monomer. The base film patterns can be fabricated by dry etching with the mask of grafted patterns. However, because of isotropic behavior in the growth of grafted polymer, the base film thickness to be directly etched with the mask of graft-polymerized film is severely limited by the resolution to be achieved. The combination of thin silicon resin as a directly etched layer using graft-polymerized film and thick organic polymer as the bottom layer can solve the conflict between resolution and overall resist thickness, because the silicone resin has an excellent durability against oxygen RIE of organic polymers. Submicron pattern formation with a high aspect ratio was demonstrated with this dry-developed multilayer resist system.

Original languageEnglish
Pages (from-to)1171-1173
Number of pages3
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume1
Issue number4
DOIs
Publication statusPublished - 1983 Jan 1
Externally publishedYes
EventProc of the Int Symp on Electron, Ion, and Photon Beams - Los Angeles, CA, USA
Duration: 1983 May 311983 Jun 3

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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