Direct observations of crystal growth from silicon melt

Kozo Fujiwara; Keiji Nakajima; Toru Ujihara; Noritaka Usami; Gen Sazaki; Hajime Hasegawa; Shozo Mizoguchi; Kazuo Nakajima

Direct observations of crystal growth from silicon melt

Kozo Fujiwara, Keiji Nakajima, Toru Ujihara, Noritaka Usami, Gen Sazaki, Hajime Hasegawa, Shozo Mizoguchi, Kazuo Nakajima

Collaborative Research Center on Energy Materials

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Crystal growth behavior from silicon melt was observed using a confocal scanning laser microscope with an infrared image furnace. The morphology of growth interface changed from planar to facet with increasing growth rate. The facet vanishing process was also observed. It was shown the (111) facet formed at a steady state. The undercooling in front of the facet interface was measured by an infrared camera and found to be almost 7 degrees. The growth behavior from silicon melt was explained by the analytical expression based on two-dimensional nucleation model.

Original language	English
Title of host publication	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Editors	K. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
Pages	110-113
Number of pages	4
Publication status	Published - 2003 Dec 1
Event	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan Duration: 2003 May 11 → 2003 May 18

Publication series

Name	Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion
Volume	A

Other

Other	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Country/Territory	Japan
City	Osaka
Period	03/5/11 → 03/5/18

ASJC Scopus subject areas

Engineering(all)

Cite this

Fujiwara, K., Nakajima, K., Ujihara, T., Usami, N., Sazaki, G., Hasegawa, H., Mizoguchi, S., & Nakajima, K. (2003). Direct observations of crystal growth from silicon melt. In K. Kurokawa, L. L. Kazmerski, B. McNeils, M. Yamaguchi, & C. Wronski (Eds.), Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion (pp. 110-113). (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion; Vol. A).

Direct observations of crystal growth from silicon melt. / Fujiwara, Kozo; Nakajima, Keiji; Ujihara, Toru et al.

Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. ed. / K. Kurokawa; L.L. Kazmerski; B. McNeils; M. Yamaguchi; C. Wronski. 2003. p. 110-113 (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion; Vol. A).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Fujiwara, K, Nakajima, K, Ujihara, T, Usami, N, Sazaki, G, Hasegawa, H, Mizoguchi, S & Nakajima, K 2003, Direct observations of crystal growth from silicon melt. in K Kurokawa, LL Kazmerski, B McNeils, M Yamaguchi & C Wronski (eds), Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion, vol. A, pp. 110-113, Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan, 03/5/11.

Fujiwara K, Nakajima K, Ujihara T, Usami N, Sazaki G, Hasegawa H et al. Direct observations of crystal growth from silicon melt. In Kurokawa K, Kazmerski LL, McNeils B, Yamaguchi M, Wronski C, editors, Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. 2003. p. 110-113. (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion).

@inproceedings{0a73193f48d049648886e199c6194bf2,

title = "Direct observations of crystal growth from silicon melt",

abstract = "Crystal growth behavior from silicon melt was observed using a confocal scanning laser microscope with an infrared image furnace. The morphology of growth interface changed from planar to facet with increasing growth rate. The facet vanishing process was also observed. It was shown the (111) facet formed at a steady state. The undercooling in front of the facet interface was measured by an infrared camera and found to be almost 7 degrees. The growth behavior from silicon melt was explained by the analytical expression based on two-dimensional nucleation model.",

author = "Kozo Fujiwara and Keiji Nakajima and Toru Ujihara and Noritaka Usami and Gen Sazaki and Hajime Hasegawa and Shozo Mizoguchi and Kazuo Nakajima",

year = "2003",

month = dec,

day = "1",

language = "English",

isbn = "4990181603",

series = "Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion",

pages = "110--113",

editor = "K. Kurokawa and L.L. Kazmerski and B. McNeils and M. Yamaguchi and C. Wronski",

booktitle = "Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion",

note = "Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion ; Conference date: 11-05-2003 Through 18-05-2003",

}

TY - GEN

T1 - Direct observations of crystal growth from silicon melt

AU - Fujiwara, Kozo

AU - Nakajima, Keiji

AU - Ujihara, Toru

AU - Usami, Noritaka

AU - Sazaki, Gen

AU - Hasegawa, Hajime

AU - Mizoguchi, Shozo

AU - Nakajima, Kazuo

PY - 2003/12/1

Y1 - 2003/12/1

N2 - Crystal growth behavior from silicon melt was observed using a confocal scanning laser microscope with an infrared image furnace. The morphology of growth interface changed from planar to facet with increasing growth rate. The facet vanishing process was also observed. It was shown the (111) facet formed at a steady state. The undercooling in front of the facet interface was measured by an infrared camera and found to be almost 7 degrees. The growth behavior from silicon melt was explained by the analytical expression based on two-dimensional nucleation model.

AB - Crystal growth behavior from silicon melt was observed using a confocal scanning laser microscope with an infrared image furnace. The morphology of growth interface changed from planar to facet with increasing growth rate. The facet vanishing process was also observed. It was shown the (111) facet formed at a steady state. The undercooling in front of the facet interface was measured by an infrared camera and found to be almost 7 degrees. The growth behavior from silicon melt was explained by the analytical expression based on two-dimensional nucleation model.

UR - http://www.scopus.com/inward/record.url?scp=6344254950&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=6344254950&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:6344254950

SN - 4990181603

SN - 9784990181604

T3 - Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion

SP - 110

EP - 113

BT - Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion

A2 - Kurokawa, K.

A2 - Kazmerski, L.L.

A2 - McNeils, B.

A2 - Yamaguchi, M.

A2 - Wronski, C.

T2 - Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion

Y2 - 11 May 2003 through 18 May 2003

ER -

Direct observations of crystal growth from silicon melt

Abstract

Publication series

Other

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this