Direct observations of crystal growth from silicon melt

Kozo Fujiwara, Keiji Nakajima, Toru Ujihara, Noritaka Usami, Gen Sazaki, Hajime Hasegawa, Shozo Mizoguchi, Kazuo Nakajima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Crystal growth behavior from silicon melt was observed using a confocal scanning laser microscope with an infrared image furnace. The morphology of growth interface changed from planar to facet with increasing growth rate. The facet vanishing process was also observed. It was shown the (111) facet formed at a steady state. The undercooling in front of the facet interface was measured by an infrared camera and found to be almost 7 degrees. The growth behavior from silicon melt was explained by the analytical expression based on two-dimensional nucleation model.

Original languageEnglish
Title of host publicationProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
EditorsK. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
Pages110-113
Number of pages4
Publication statusPublished - 2003 Dec 1
EventProceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan
Duration: 2003 May 112003 May 18

Publication series

NameProceedings of the 3rd World Conference on Photovoltaic Energy Conversion
VolumeA

Other

OtherProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
CountryJapan
CityOsaka
Period03/5/1103/5/18

ASJC Scopus subject areas

  • Engineering(all)

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