We build a method for measuring leakage current of anomalously leaky cells (tail cells) in dynamic random access memories. We find that the traps in tail cells are at a region of stronger electric field in the p-n junction and their energy levels are nearer the midgap than the respective values for average cells.
- Dynamic random access memories (DRAMs)
- Junction leakage
- Retention time
- Test element group (TEG)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering