Direct observation of worst-bit leakage currents of DRAM

Yuki Mori; Shiro Kamohara; Masahiro Moniwa; Kiyonori Ohyu; Toshiaki Yamanaka; Ren Ichi Yamada

doi:10.1109/TED.2005.862245

Direct observation of worst-bit leakage currents of DRAM

Yuki Mori, Shiro Kamohara, Masahiro Moniwa, Kiyonori Ohyu, Toshiaki Yamanaka, Ren Ichi Yamada

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We build a method for measuring leakage current of anomalously leaky cells (tail cells) in dynamic random access memories. We find that the traps in tail cells are at a region of stronger electric field in the p-n junction and their energy levels are nearer the midgap than the respective values for average cells.

Original language	English
Pages (from-to)	398-400
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	53
Issue number	2
DOIs	https://doi.org/10.1109/TED.2005.862245
Publication status	Published - 2006 Feb
Externally published	Yes

Keywords

Dynamic random access memories (DRAMs)
Junction leakage
Retention time
Test element group (TEG)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2005.862245

Cite this

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title = "Direct observation of worst-bit leakage currents of DRAM",

abstract = "We build a method for measuring leakage current of anomalously leaky cells (tail cells) in dynamic random access memories. We find that the traps in tail cells are at a region of stronger electric field in the p-n junction and their energy levels are nearer the midgap than the respective values for average cells.",

keywords = "Dynamic random access memories (DRAMs), Junction leakage, Retention time, Test element group (TEG)",

author = "Yuki Mori and Shiro Kamohara and Masahiro Moniwa and Kiyonori Ohyu and Toshiaki Yamanaka and Yamada, {Ren Ichi}",

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T1 - Direct observation of worst-bit leakage currents of DRAM

AU - Mori, Yuki

AU - Kamohara, Shiro

AU - Moniwa, Masahiro

AU - Ohyu, Kiyonori

AU - Yamanaka, Toshiaki

AU - Yamada, Ren Ichi

PY - 2006/2

Y1 - 2006/2

N2 - We build a method for measuring leakage current of anomalously leaky cells (tail cells) in dynamic random access memories. We find that the traps in tail cells are at a region of stronger electric field in the p-n junction and their energy levels are nearer the midgap than the respective values for average cells.

AB - We build a method for measuring leakage current of anomalously leaky cells (tail cells) in dynamic random access memories. We find that the traps in tail cells are at a region of stronger electric field in the p-n junction and their energy levels are nearer the midgap than the respective values for average cells.

KW - Dynamic random access memories (DRAMs)

KW - Junction leakage

KW - Retention time

KW - Test element group (TEG)

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 2

ER -

Direct observation of worst-bit leakage currents of DRAM

Abstract

Keywords

ASJC Scopus subject areas

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