Direct observation of worst-bit leakage currents of DRAM

Yuki Mori, Shiro Kamohara, Masahiro Moniwa, Kiyonori Ohyu, Toshiaki Yamanaka, Ren Ichi Yamada

    Research output: Contribution to journalArticlepeer-review

    6 Citations (Scopus)


    We build a method for measuring leakage current of anomalously leaky cells (tail cells) in dynamic random access memories. We find that the traps in tail cells are at a region of stronger electric field in the p-n junction and their energy levels are nearer the midgap than the respective values for average cells.

    Original languageEnglish
    Pages (from-to)398-400
    Number of pages3
    JournalIEEE Transactions on Electron Devices
    Issue number2
    Publication statusPublished - 2006 Feb 1


    • Dynamic random access memories (DRAMs)
    • Junction leakage
    • Retention time
    • Test element group (TEG)

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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