Direct observation of worst-bit leakage currents of DRAM

Yuki Mori, Shiro Kamohara, Masahiro Moniwa, Kiyonori Ohyu, Toshiaki Yamanaka, Ren Ichi Yamada

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


We build a method for measuring leakage current of anomalously leaky cells (tail cells) in dynamic random access memories. We find that the traps in tail cells are at a region of stronger electric field in the p-n junction and their energy levels are nearer the midgap than the respective values for average cells.

Original languageEnglish
Pages (from-to)398-400
Number of pages3
JournalIEEE Transactions on Electron Devices
Issue number2
Publication statusPublished - 2006 Feb
Externally publishedYes


  • Dynamic random access memories (DRAMs)
  • Junction leakage
  • Retention time
  • Test element group (TEG)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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