Direct observation of worst-bit leakage currents of DRAM

Yuki Mori; Shiro Kamohara; Masahiro Moniwa; Kiyonori Ohyu; Toshiaki Yamanaka; Ren Ichi Yamada

doi:10.1109/TED.2005.862245

Direct observation of worst-bit leakage currents of DRAM

Yuki Mori, Shiro Kamohara, Masahiro Moniwa, Kiyonori Ohyu, Toshiaki Yamanaka, Ren Ichi Yamada

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We build a method for measuring leakage current of anomalously leaky cells (tail cells) in dynamic random access memories. We find that the traps in tail cells are at a region of stronger electric field in the p-n junction and their energy levels are nearer the midgap than the respective values for average cells.

Original language	English
Pages (from-to)	398-400
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	53
Issue number	2
DOIs	https://doi.org/10.1109/TED.2005.862245
Publication status	Published - 2006 Feb 1

Keywords

Dynamic random access memories (DRAMs)
Junction leakage
Retention time
Test element group (TEG)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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AU - Kamohara, Shiro

AU - Moniwa, Masahiro

AU - Ohyu, Kiyonori

AU - Yamanaka, Toshiaki

AU - Yamada, Ren Ichi

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KW - Junction leakage

KW - Retention time

KW - Test element group (TEG)

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