Abstract
We build a method for measuring leakage current of anomalously leaky cells (tail cells) in dynamic random access memories. We find that the traps in tail cells are at a region of stronger electric field in the p-n junction and their energy levels are nearer the midgap than the respective values for average cells.
Original language | English |
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Pages (from-to) | 398-400 |
Number of pages | 3 |
Journal | IEEE Transactions on Electron Devices |
Volume | 53 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2006 Feb |
Externally published | Yes |
Keywords
- Dynamic random access memories (DRAMs)
- Junction leakage
- Retention time
- Test element group (TEG)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering