Direct observation of two-dimensional growth at SiO2/Si(111) interface

Daisuke Hojo, Norio Tokuda, Kikuo Yamabe

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


The residue of the two-dimensional (2D) oxide-island growth was directly investigated by observing the morphology change of the SiO2/Si(111) interface with atomic force microscopy, after removing SiO2. It was found that oxidation progressed by the bilayers in the (111) orientation instead of by the monolayers. Oxidation created the oxide-islands in an atomic layer, while the Si-islands were found to exist in the previous atomic layer. This result indicates that thermal oxidation progresses not by a strict layer-by-layer process. Furthermore, the deviation from the layer-by-layer process was increased as the oxidation temperature was decreased. This morphology degradation at low-oxidation temperatures (< 1050 °C) is due to the constraint of the 2D expansion rate of the oxide-island.

Original languageEnglish
Pages (from-to)7892-7898
Number of pages7
JournalThin Solid Films
Issue number20-21
Publication statusPublished - 2007 Jul 31


  • Atomic force microscopy
  • Interface
  • Oxidation
  • Silicon
  • Step/Terrace
  • Surface roughness

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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