Direct observation of thermal alteration of mixed film of Ge and SiO

C. Kaito, K. Kamitsuji, S. Tanaka, O. Kido, M. Kurumada, T. Sato, Y. Kimura, H. Suzuki, Y. Saito

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The dynamic behavior of a film produced by coevaporation of Ge-SiO was observed in situ using a transmission electron microscope. The film produced had an amorphous structure containing Si, Ge and SiO2. A characteristic change of the film was observed above 500 °C. Upon heating at 750 °C, in addition to the growth of the SiGe mixed crystal with the diamond structure, the liquidlike mixed phase of SiGe-SiO2 was also produced. The growth process of the liquidlike phase was directly observed in situ. The growth process of Ge and GeSi nanocrystallites has been elucidated by cooling the mixed film to room temperature.

Original languageEnglish
Pages (from-to)396-399
Number of pages4
JournalThin Solid Films
Volume483
Issue number1-2
DOIs
Publication statusPublished - 2005 Jul 1

Keywords

  • Germanium
  • Nanostructures
  • Silicon oxide
  • Transmission electron microscopy (TEM)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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