Direct observation of the site-specific valence electronic structure at SiO2/Si(111) interface

Y. Yamashita, S. Yamamoto, K. Mukai, J. Yoshinobu, Y. Harada, T. Tokushima, T. Takeuchi, Y. Takata, S. Shin, K. Akagi, S. Tsuneyuki

Research output: Contribution to journalArticle

Abstract

For today's silicon based devices, understanding the SiO 2/Si(111) interface on atomic level is an important subject for fabricating superior devices. However, despite of many studies on the SiO 2/Si(111) interface, the interfacial valence electronic states have been typically evaluated as the average and not as individual states. In the present study, we successfully observed valence electronic states of particular atoms at the SiO2/Si(111) interface for the first time using soft x-ray absorption and emission spectroscopy. In addition, comparing the experimental results to first-principles calculations revealed local interfacial properties.

Original languageEnglish
Pages (from-to)280-284
Number of pages5
Journale-Journal of Surface Science and Nanotechnology
Volume4
DOIs
Publication statusPublished - 2006 Mar 24
Externally publishedYes

Keywords

  • Density functional calculations
  • Interface
  • Semiconductor-insulator interfaces
  • Silicon
  • Silicon oxides
  • X-ray emission

ASJC Scopus subject areas

  • Biotechnology
  • Bioengineering
  • Condensed Matter Physics
  • Mechanics of Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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    Yamashita, Y., Yamamoto, S., Mukai, K., Yoshinobu, J., Harada, Y., Tokushima, T., Takeuchi, T., Takata, Y., Shin, S., Akagi, K., & Tsuneyuki, S. (2006). Direct observation of the site-specific valence electronic structure at SiO2/Si(111) interface. e-Journal of Surface Science and Nanotechnology, 4, 280-284. https://doi.org/10.1380/ejssnt.2006.280