Direct observation of site-specific valence electronic structure at the Si O2 Si interface

Y. Yamashita, S. Yamamoto, K. Mukai, J. Yoshinobu, Y. Harada, T. Tokushima, T. Takeuchi, Y. Takata, S. Shin, K. Akagi, S. Tsuneyuki

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)

Abstract

Atom specific valence electronic structures at the solid-solid interface are elucidated successfully using soft x-ray absorption and emission spectroscopy. In order to demonstrate the versatility of this method, we investigated the Si O2 Si interface as a prototype and directly observed valence electronic states projected at the particular atoms of the Si O2 Si interface; the local electronic structure strongly depends on the chemical states of each atom. In addition, we compared the experimental results with first-principles calculations, which quantitatively revealed the interface properties in atomic scale.

Original languageEnglish
Article number045336
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume73
Issue number4
DOIs
Publication statusPublished - 2006
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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