TY - JOUR
T1 - Direct observation of site-specific valence electronic structure at the Si O2 Si interface
AU - Yamashita, Y.
AU - Yamamoto, S.
AU - Mukai, K.
AU - Yoshinobu, J.
AU - Harada, Y.
AU - Tokushima, T.
AU - Takeuchi, T.
AU - Takata, Y.
AU - Shin, S.
AU - Akagi, K.
AU - Tsuneyuki, S.
PY - 2006
Y1 - 2006
N2 - Atom specific valence electronic structures at the solid-solid interface are elucidated successfully using soft x-ray absorption and emission spectroscopy. In order to demonstrate the versatility of this method, we investigated the Si O2 Si interface as a prototype and directly observed valence electronic states projected at the particular atoms of the Si O2 Si interface; the local electronic structure strongly depends on the chemical states of each atom. In addition, we compared the experimental results with first-principles calculations, which quantitatively revealed the interface properties in atomic scale.
AB - Atom specific valence electronic structures at the solid-solid interface are elucidated successfully using soft x-ray absorption and emission spectroscopy. In order to demonstrate the versatility of this method, we investigated the Si O2 Si interface as a prototype and directly observed valence electronic states projected at the particular atoms of the Si O2 Si interface; the local electronic structure strongly depends on the chemical states of each atom. In addition, we compared the experimental results with first-principles calculations, which quantitatively revealed the interface properties in atomic scale.
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U2 - 10.1103/PhysRevB.73.045336
DO - 10.1103/PhysRevB.73.045336
M3 - Article
AN - SCOPUS:33244469035
VL - 73
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 0163-1829
IS - 4
M1 - 045336
ER -