Direct observation of one-dimensional Ga-Atom migration on a Si(100)-(2 × 1)-H Surface: A local probe of adsorption energy variation

Taro Hitosugi, Y. Suwa, S. Matsuura, S. Heike, T. Onogi, S. Watanabe, T. Hasegawa, K. Kitazawa, T. Hashizume

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    15 Citations (Scopus)

    Abstract

    Atomic-scale surface migration of a Ga atom on a hydrogen-terminated Si(100)- (2 × 1)-H surface is studied using low-temperature scanning tunneling microscopy and first-principles calculations. The Ga atom migrates in a linear potential well confined by adjacent dimer rows and local dihydride defects, and is observed as a continuous linear protrusion (Ga-bar structure) at a narrow range of temperatures near 100 K. We point out that the height of the Ga-bar structure maps out the local variation in potential energy at individual adsorption sites.

    Original languageEnglish
    Pages (from-to)4116-4119
    Number of pages4
    JournalPhysical Review Letters
    Volume83
    Issue number20
    DOIs
    Publication statusPublished - 1999 Jan 1

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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