Direct observation of intergranular cracks in sintered silicon nitride

Seiichiro Ii; Chihiro Iwamoto; Katsuyuki Matsunaga; Takahisa Yamamoto; Masato Yoshiya; Yuichi Ikuhara

doi:10.1080/14786430410001671485

Direct observation of intergranular cracks in sintered silicon nitride

Seiichiro Ii, Chihiro Iwamoto, Katsuyuki Matsunaga, Takahisa Yamamoto, Masato Yoshiya, Yuichi Ikuhara

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Crack propagation along grain boundaries in sintered silicon nitride (Si₃N₄ was investigated by in-situ straining experiments at room temperature in a transmission electron microscope, using a high-precision microindenter. Using this in-situ technique, cracks introduced were introduced in situ and observed propagating along grain boundaries. High-resolution electron microscopy observation revealed that the propagation of the intergranular crack takes place at an interface between the Si ₃N₄ grains and the intergranular glassy film (IGF). This suggests that the Si₃N₄/IGF interface has a relatively high excess energy. The result was compared with a theoretical calculation using a molecular dynamics simulation.

Original language	English
Pages (from-to)	2767-2775
Number of pages	9
Journal	Philosophical Magazine
Volume	84
Issue number	25-26
DOIs	https://doi.org/10.1080/14786430410001671485
Publication status	Published - 2004 Sep 1
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics

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10.1080/14786430410001671485

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title = "Direct observation of intergranular cracks in sintered silicon nitride",

abstract = "Crack propagation along grain boundaries in sintered silicon nitride (Si3N4 was investigated by in-situ straining experiments at room temperature in a transmission electron microscope, using a high-precision microindenter. Using this in-situ technique, cracks introduced were introduced in situ and observed propagating along grain boundaries. High-resolution electron microscopy observation revealed that the propagation of the intergranular crack takes place at an interface between the Si 3N4 grains and the intergranular glassy film (IGF). This suggests that the Si3N4/IGF interface has a relatively high excess energy. The result was compared with a theoretical calculation using a molecular dynamics simulation.",

author = "Seiichiro Ii and Chihiro Iwamoto and Katsuyuki Matsunaga and Takahisa Yamamoto and Masato Yoshiya and Yuichi Ikuhara",

note = "Funding Information: This work was supported by the Active Nano-Characterization and Technology Project, special coordination funds of the ministry of Education, Culture, Sports, Science and Technology of the Japan Government. Discussions with Professor H. Gu, Professor I. Tanaka and Professor H. Adachi are acknowledged.",

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T1 - Direct observation of intergranular cracks in sintered silicon nitride

AU - Ii, Seiichiro

AU - Iwamoto, Chihiro

AU - Matsunaga, Katsuyuki

AU - Yamamoto, Takahisa

AU - Yoshiya, Masato

AU - Ikuhara, Yuichi

N1 - Funding Information: This work was supported by the Active Nano-Characterization and Technology Project, special coordination funds of the ministry of Education, Culture, Sports, Science and Technology of the Japan Government. Discussions with Professor H. Gu, Professor I. Tanaka and Professor H. Adachi are acknowledged.

PY - 2004/9/1

Y1 - 2004/9/1

N2 - Crack propagation along grain boundaries in sintered silicon nitride (Si3N4 was investigated by in-situ straining experiments at room temperature in a transmission electron microscope, using a high-precision microindenter. Using this in-situ technique, cracks introduced were introduced in situ and observed propagating along grain boundaries. High-resolution electron microscopy observation revealed that the propagation of the intergranular crack takes place at an interface between the Si 3N4 grains and the intergranular glassy film (IGF). This suggests that the Si3N4/IGF interface has a relatively high excess energy. The result was compared with a theoretical calculation using a molecular dynamics simulation.

AB - Crack propagation along grain boundaries in sintered silicon nitride (Si3N4 was investigated by in-situ straining experiments at room temperature in a transmission electron microscope, using a high-precision microindenter. Using this in-situ technique, cracks introduced were introduced in situ and observed propagating along grain boundaries. High-resolution electron microscopy observation revealed that the propagation of the intergranular crack takes place at an interface between the Si 3N4 grains and the intergranular glassy film (IGF). This suggests that the Si3N4/IGF interface has a relatively high excess energy. The result was compared with a theoretical calculation using a molecular dynamics simulation.

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Direct observation of intergranular cracks in sintered silicon nitride

Abstract

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